Physics of semiconductor microcavity lasers

Stephan W Koch, F. Jahnke, W. W. Chow

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

This review summarizes recent developments and successes in the theoretical modelling of the characteristics of semiconductor microcavity lasers. After a discussion of the basic laser properties, results of a quasi-equilibrium many-body theory are presented which are very useful for the understanding of microcavity laser operation not too far above the laser threshold. Non-equilibrium phenomena, such as spectral and kinetic hole burning as well as plasma heating effects, are analysed using a quantum kinetic approach. Comparisons with experimental observations are discussed, before open problems and future challenges are outlined.

Original languageEnglish (US)
Pages (from-to)739-751
Number of pages13
JournalSemiconductor Science and Technology
Volume10
Issue number6
DOIs
StatePublished - Jun 1995
Externally publishedYes

Fingerprint

Microcavities
Physics
semiconductor lasers
Semiconductor materials
physics
Lasers
lasers
plasma heating
hole burning
kinetics
Plasma heating
Kinetics
thresholds

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Physics of semiconductor microcavity lasers. / Koch, Stephan W; Jahnke, F.; Chow, W. W.

In: Semiconductor Science and Technology, Vol. 10, No. 6, 06.1995, p. 739-751.

Research output: Contribution to journalArticle

Koch, Stephan W ; Jahnke, F. ; Chow, W. W. / Physics of semiconductor microcavity lasers. In: Semiconductor Science and Technology. 1995 ; Vol. 10, No. 6. pp. 739-751.
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