Picosecond recovery of excitonic optical nonlinearities of MBE-grown ZnSe thin films.

S. H. Park, B. Fluegel, R. A. Morgan, Stephan W Koch, J. Sokolof, Nasser N Peyghambarian, M. Joffre, J. E. Potts, H. Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The observation of large nonlinearity of electronic origin and the measurement of the very fast response time of this nonlinearity are reported. The magnitude and dynamics of this excitonic effect were measured at various temperatures in high-purity ZnSe thin film grown by molecular beam epitaxy on GaAs substrates. Two series of experiments were performed. In the first, a 3-ns laser system was used to measure the nonlinear index of refraction as a function of wavelength at 150 and 300 K. Clear excitonic effects were observed. The experimental results agree well with a partly phenomenological plasma theory that takes into account many-body effects. In the second series of experiments, the response time of the excitonic nonlinearity was measured using femtosecond laser techniques. A very rapid response time for the nonlinearity (exciton recovery time) in the range of 100 ps was measured. The exciton recovery time was faster for thinner samples.

Original languageEnglish (US)
Title of host publicationCLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7
PublisherPubl by IEEE
ISBN (Print)155752033X
StatePublished - 1988

Fingerprint

Molecular beam epitaxy
Excitons
Plasma theory
Recovery
Thin films
Ultrashort pulses
Refraction
Experiments
Wavelength
Lasers
Substrates
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Park, S. H., Fluegel, B., Morgan, R. A., Koch, S. W., Sokolof, J., Peyghambarian, N. N., ... Cheng, H. (1988). Picosecond recovery of excitonic optical nonlinearities of MBE-grown ZnSe thin films. In CLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7 Publ by IEEE.

Picosecond recovery of excitonic optical nonlinearities of MBE-grown ZnSe thin films. / Park, S. H.; Fluegel, B.; Morgan, R. A.; Koch, Stephan W; Sokolof, J.; Peyghambarian, Nasser N; Joffre, M.; Potts, J. E.; Cheng, H.

CLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7. Publ by IEEE, 1988.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, SH, Fluegel, B, Morgan, RA, Koch, SW, Sokolof, J, Peyghambarian, NN, Joffre, M, Potts, JE & Cheng, H 1988, Picosecond recovery of excitonic optical nonlinearities of MBE-grown ZnSe thin films. in CLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7. Publ by IEEE.
Park SH, Fluegel B, Morgan RA, Koch SW, Sokolof J, Peyghambarian NN et al. Picosecond recovery of excitonic optical nonlinearities of MBE-grown ZnSe thin films. In CLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7. Publ by IEEE. 1988
Park, S. H. ; Fluegel, B. ; Morgan, R. A. ; Koch, Stephan W ; Sokolof, J. ; Peyghambarian, Nasser N ; Joffre, M. ; Potts, J. E. ; Cheng, H. / Picosecond recovery of excitonic optical nonlinearities of MBE-grown ZnSe thin films. CLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7. Publ by IEEE, 1988.
@inproceedings{6b427355d1d04488a2c2dda681bff8e0,
title = "Picosecond recovery of excitonic optical nonlinearities of MBE-grown ZnSe thin films.",
abstract = "The observation of large nonlinearity of electronic origin and the measurement of the very fast response time of this nonlinearity are reported. The magnitude and dynamics of this excitonic effect were measured at various temperatures in high-purity ZnSe thin film grown by molecular beam epitaxy on GaAs substrates. Two series of experiments were performed. In the first, a 3-ns laser system was used to measure the nonlinear index of refraction as a function of wavelength at 150 and 300 K. Clear excitonic effects were observed. The experimental results agree well with a partly phenomenological plasma theory that takes into account many-body effects. In the second series of experiments, the response time of the excitonic nonlinearity was measured using femtosecond laser techniques. A very rapid response time for the nonlinearity (exciton recovery time) in the range of 100 ps was measured. The exciton recovery time was faster for thinner samples.",
author = "Park, {S. H.} and B. Fluegel and Morgan, {R. A.} and Koch, {Stephan W} and J. Sokolof and Peyghambarian, {Nasser N} and M. Joffre and Potts, {J. E.} and H. Cheng",
year = "1988",
language = "English (US)",
isbn = "155752033X",
booktitle = "CLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7",
publisher = "Publ by IEEE",

}

TY - GEN

T1 - Picosecond recovery of excitonic optical nonlinearities of MBE-grown ZnSe thin films.

AU - Park, S. H.

AU - Fluegel, B.

AU - Morgan, R. A.

AU - Koch, Stephan W

AU - Sokolof, J.

AU - Peyghambarian, Nasser N

AU - Joffre, M.

AU - Potts, J. E.

AU - Cheng, H.

PY - 1988

Y1 - 1988

N2 - The observation of large nonlinearity of electronic origin and the measurement of the very fast response time of this nonlinearity are reported. The magnitude and dynamics of this excitonic effect were measured at various temperatures in high-purity ZnSe thin film grown by molecular beam epitaxy on GaAs substrates. Two series of experiments were performed. In the first, a 3-ns laser system was used to measure the nonlinear index of refraction as a function of wavelength at 150 and 300 K. Clear excitonic effects were observed. The experimental results agree well with a partly phenomenological plasma theory that takes into account many-body effects. In the second series of experiments, the response time of the excitonic nonlinearity was measured using femtosecond laser techniques. A very rapid response time for the nonlinearity (exciton recovery time) in the range of 100 ps was measured. The exciton recovery time was faster for thinner samples.

AB - The observation of large nonlinearity of electronic origin and the measurement of the very fast response time of this nonlinearity are reported. The magnitude and dynamics of this excitonic effect were measured at various temperatures in high-purity ZnSe thin film grown by molecular beam epitaxy on GaAs substrates. Two series of experiments were performed. In the first, a 3-ns laser system was used to measure the nonlinear index of refraction as a function of wavelength at 150 and 300 K. Clear excitonic effects were observed. The experimental results agree well with a partly phenomenological plasma theory that takes into account many-body effects. In the second series of experiments, the response time of the excitonic nonlinearity was measured using femtosecond laser techniques. A very rapid response time for the nonlinearity (exciton recovery time) in the range of 100 ps was measured. The exciton recovery time was faster for thinner samples.

UR - http://www.scopus.com/inward/record.url?scp=18744426372&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18744426372&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:18744426372

SN - 155752033X

BT - CLEO 88 Conf Lasers Electro Opt 1988 Tech Dig Ser Vol 7

PB - Publ by IEEE

ER -