Piezoelectric properties of sol-gel derived PZT thin films with various Zr/Ti ratios

G. Teowee, K. C. McCarthy, F. S. McCarthy, D. G. Davis, J. T. Dawley, B. J.J. Zelinski, D. R. Uhlmann

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

Piezoelectric thin films are useful for application in microelectromechanical devices. A series of sol-gel derived PZT (lead zirconate titanate) thin films with various Zr/Ti ratios were prepared on platinized substrates. These films were fired to 650C - 700C to crystallize them into single-phase perovskite films, and their piezoelectric properties were measured using optical lever-based instrumentation. Large d33 piezoelectric coefficients up to 400 pm/V were obtained at the morphotropic phase boundary (PZT 53/47), making such films attractive in applications such as thin film transducers, microcantilevers and surface acoustic wave devices.

Original languageEnglish (US)
Pages (from-to)439-444
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume493
StatePublished - Jan 1 1998
Externally publishedYes
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Teowee, G., McCarthy, K. C., McCarthy, F. S., Davis, D. G., Dawley, J. T., Zelinski, B. J. J., & Uhlmann, D. R. (1998). Piezoelectric properties of sol-gel derived PZT thin films with various Zr/Ti ratios. Materials Research Society Symposium - Proceedings, 493, 439-444.