Piezoelectric properties of sol-gel derived ZnO thin films

T. J. Bukowski, K. McCarthy, F. McCarthy, G. Teowee, T. P. Alexander, D. R. Uhlmann, J. T. Dawley, B. J.J. Zelinski

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

ZnO films exhibit a wide range of interesting material properties. Recently, ZnO films have been studied for sensing applications based . on their piezoelectric and pyroelectric behaviors. Reported literature values of piezoelectric and pyroelectric coefficients of ZnO films are in the range of 11-12 pm/V and 1.0-1.4 nC/cm2-K respectively. In this study, the piezoelectric properties of sol-gel derived ZnO thin films were measured. These films were prepared on platinized Si wafers and fired to temperatures ranging from 550°C to 750°C. Multiple spincoating was performed with an intermediate/king at 400°C between coatings to obtain films up to 6000 A thick. Top Pt electrodes were sputtered to form monolithic capacitors. XRD indicated that the films consisted of crystalline wurtzite at firing temperatures as low as 400°C, and that the c-axis orientation increased with increasing firing temperature. A dielectric constant of 10 was obtained, while piezoelectric characterization indicated d33 values as large as 12 pm/V i.e., values similar to those of bulk ZnO.

Original languageEnglish (US)
Pages (from-to)339-347
Number of pages9
JournalIntegrated Ferroelectrics
Volume17
Issue number1-4
DOIs
StatePublished - 1997

Keywords

  • Films
  • Piezoelectric
  • Sol-gel
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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