Plasma-heating induced intensity-dependent gain in semiconductor lasers

C. Z. Ning, Jerome V Moloney

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Starting from a set of equations derived from a microscopic theory we show that the familiar nonlinear gain of the form a/(1+I/Is) introduced in semiconductor laser rate equations phenomenologically should be replaced by a more general form of a/(1+I/Is)b. The new scaling exponent b depends on the relaxation constant γT that describes the rate of heat dissipation from plasma to the lattice due to carrier-phonon scattering.

Original languageEnglish (US)
Pages (from-to)559
Number of pages1
JournalApplied Physics Letters
DOIs
StatePublished - 1995

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plasma heating
semiconductor lasers
exponents
cooling
scaling
scattering

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Plasma-heating induced intensity-dependent gain in semiconductor lasers. / Ning, C. Z.; Moloney, Jerome V.

In: Applied Physics Letters, 1995, p. 559.

Research output: Contribution to journalArticle

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