### Abstract

Starting from a set of equations derived from a microscopic theory we show that the familiar nonlinear gain of the form a/(1+I/I_{s}) introduced in semiconductor laser rate equations phenomenologically should be replaced by a more general form of a/(1+I/I_{s})^{b}. The new scaling exponent b depends on the relaxation constant γ_{T} that describes the rate of heat dissipation from plasma to the lattice due to carrier-phonon scattering.

Original language | English (US) |
---|---|

Pages (from-to) | 559 |

Number of pages | 1 |

Journal | Applied Physics Letters |

DOIs | |

State | Published - 1995 |

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### ASJC Scopus subject areas

- Physics and Astronomy (miscellaneous)

### Cite this

**Plasma-heating induced intensity-dependent gain in semiconductor lasers.** / Ning, C. Z.; Moloney, Jerome V.

Research output: Contribution to journal › Article

}

TY - JOUR

T1 - Plasma-heating induced intensity-dependent gain in semiconductor lasers

AU - Ning, C. Z.

AU - Moloney, Jerome V

PY - 1995

Y1 - 1995

N2 - Starting from a set of equations derived from a microscopic theory we show that the familiar nonlinear gain of the form a/(1+I/Is) introduced in semiconductor laser rate equations phenomenologically should be replaced by a more general form of a/(1+I/Is)b. The new scaling exponent b depends on the relaxation constant γT that describes the rate of heat dissipation from plasma to the lattice due to carrier-phonon scattering.

AB - Starting from a set of equations derived from a microscopic theory we show that the familiar nonlinear gain of the form a/(1+I/Is) introduced in semiconductor laser rate equations phenomenologically should be replaced by a more general form of a/(1+I/Is)b. The new scaling exponent b depends on the relaxation constant γT that describes the rate of heat dissipation from plasma to the lattice due to carrier-phonon scattering.

UR - http://www.scopus.com/inward/record.url?scp=36449006851&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449006851&partnerID=8YFLogxK

U2 - 10.1063/1.114012

DO - 10.1063/1.114012

M3 - Article

AN - SCOPUS:36449006851

SP - 559

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -