Abstract
Linear exciton-polariton propagation in semiconductors is analyzed using a microscopic theory. Numerical results are compared with various approximation schemes based on additional boundary conditions, and with phase-amplitude linear spectroscopy experiments in high-quality GaAs. A simultaneous description of the measured amplitude and phase of the transmitted electric field is only possible with the full model.
| Original language | English (US) |
|---|---|
| Article number | 045202 |
| Pages (from-to) | 452021-4520217 |
| Number of pages | 4068197 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 63 |
| Issue number | 4 |
| State | Published - Jan 1 2001 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Schneider, H. C., Jahnke, F., Koch, S. W., Tignon, J., Hasche, T., & Chemla, D. S. (2001). Polariton propagation in high quality semiconductors: Microscopic theory and experiment versus additional boundary conditions. Physical Review B - Condensed Matter and Materials Physics, 63(4), 452021-4520217. [045202].