Polariton propagation in high quality semiconductors: Microscopic theory and experiment versus additional boundary conditions

H. C. Schneider; F. Jahnke; S. W. Koch; J. Tignon; T. Hasche; D. S. Chemla

doi:10.1103/physrevb.63.045202

Polariton propagation in high quality semiconductors: Microscopic theory and experiment versus additional boundary conditions

H. C. Schneider, F. Jahnke, S. W. Koch, J. Tignon, T. Hasche, D. S. Chemla

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Linear exciton-polariton propagation in semiconductors is analyzed using a microscopic theory. Numerical results are compared with various approximation schemes based on additional boundary conditions, and with phase-amplitude linear spectroscopy experiments in high-quality GaAs. A simultaneous description of the measured amplitude and phase of the transmitted electric field is only possible with the full model.

Original language	English (US)
Article number	045202
Pages (from-to)	452021-4520217
Number of pages	4068197
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	63
Issue number	4
DOIs	https://doi.org/10.1103/physrevb.63.045202
State	Published - 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/physrevb.63.045202

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Polariton propagation in high quality semiconductors : Microscopic theory and experiment versus additional boundary conditions. / Schneider, H. C.; Jahnke, F.; Koch, S. W.; Tignon, J.; Hasche, T.; Chemla, D. S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 63, No. 4, 045202, 2001, p. 452021-4520217.

Research output: Contribution to journal › Article › peer-review

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Polariton propagation in high quality semiconductors: Microscopic theory and experiment versus additional boundary conditions

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