Polariton propagation in high quality semiconductors: Microscopic theory and experiment versus additional boundary conditions

H. C. Schneider, F. Jahnke, Stephan W Koch, J. Tignon, T. Hasche, D. S. Chemla

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Linear exciton-polariton propagation in semiconductors is analyzed using a microscopic theory. Numerical results are compared with various approximation schemes based on additional boundary conditions, and with phase-amplitude linear spectroscopy experiments in high-quality GaAs. A simultaneous description of the measured amplitude and phase of the transmitted electric field is only possible with the full model.

Original languageEnglish (US)
Article number045202
Pages (from-to)452021-4520217
Number of pages4068197
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number4
StatePublished - 2001
Externally publishedYes

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Excitons
polaritons
Electric fields
Boundary conditions
Spectroscopy
Semiconductor materials
boundary conditions
propagation
Experiments
excitons
electric fields
approximation
spectroscopy
LDS 751
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Polariton propagation in high quality semiconductors : Microscopic theory and experiment versus additional boundary conditions. / Schneider, H. C.; Jahnke, F.; Koch, Stephan W; Tignon, J.; Hasche, T.; Chemla, D. S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 63, No. 4, 045202, 2001, p. 452021-4520217.

Research output: Contribution to journalArticle

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