Abstract
The functional form of coating-induced polarization aberrations in EUV lithography systems is evaluated through polarization ray tracing of an example 3×EUV scanner with state-of-the-art graded multilayer coatings. In particular, the impact of coating-induced on-axis astigmatism, as well as diattenuation and retardance on image quality are investigated. The point spread function (PSF) consists of four polarization-dependent components: two are nearly diffraction limited and two are highly apodized, and all components can be described by a Mueller matrix Point Spread Matrix (PSM). The highly apodized components are "ghost" images that are larger than the diffraction limit, reducing image contrast and resolution.
Original language | English (US) |
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Title of host publication | Extreme Ultraviolet (EUV) Lithography VII |
Publisher | SPIE |
Volume | 9776 |
ISBN (Electronic) | 9781510600119 |
DOIs | |
State | Published - 2016 |
Event | Extreme Ultraviolet (EUV) Lithography VII - San Jose, United States Duration: Feb 22 2016 → Feb 25 2016 |
Other
Other | Extreme Ultraviolet (EUV) Lithography VII |
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Country | United States |
City | San Jose |
Period | 2/22/16 → 2/25/16 |
Keywords
- EUV
- lithography
- multilayer thin film coatings
- polarization aberrations
- polarization ray tracing
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering