Polarization aberrations induced by graded multilayer coatings in EUV lithography scanners

Thiago S. Jota; Russell A Chipman

doi:10.1117/12.2218918

Polarization aberrations induced by graded multilayer coatings in EUV lithography scanners

Thiago S. Jota, Russell A Chipman

Optical Sciences, College of

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The functional form of coating-induced polarization aberrations in EUV lithography systems is evaluated through polarization ray tracing of an example 3×EUV scanner with state-of-the-art graded multilayer coatings. In particular, the impact of coating-induced on-axis astigmatism, as well as diattenuation and retardance on image quality are investigated. The point spread function (PSF) consists of four polarization-dependent components: two are nearly diffraction limited and two are highly apodized, and all components can be described by a Mueller matrix Point Spread Matrix (PSM). The highly apodized components are "ghost" images that are larger than the diffraction limit, reducing image contrast and resolution.

Original language	English (US)
Title of host publication	Extreme Ultraviolet (EUV) Lithography VII
Publisher	SPIE
Volume	9776
ISBN (Electronic)	9781510600119
DOIs	https://doi.org/10.1117/12.2218918
State	Published - 2016
Event	Extreme Ultraviolet (EUV) Lithography VII - San Jose, United States Duration: Feb 22 2016 → Feb 25 2016

Other

Other	Extreme Ultraviolet (EUV) Lithography VII
Country	United States
City	San Jose
Period	2/22/16 → 2/25/16

Keywords

EUV
lithography
multilayer thin film coatings
polarization aberrations
polarization ray tracing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.2218918

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Jota, T. S., & Chipman, R. A. (2016). Polarization aberrations induced by graded multilayer coatings in EUV lithography scanners. In Extreme Ultraviolet (EUV) Lithography VII (Vol. 9776). [977617] SPIE. https://doi.org/10.1117/12.2218918

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AB - The functional form of coating-induced polarization aberrations in EUV lithography systems is evaluated through polarization ray tracing of an example 3×EUV scanner with state-of-the-art graded multilayer coatings. In particular, the impact of coating-induced on-axis astigmatism, as well as diattenuation and retardance on image quality are investigated. The point spread function (PSF) consists of four polarization-dependent components: two are nearly diffraction limited and two are highly apodized, and all components can be described by a Mueller matrix Point Spread Matrix (PSM). The highly apodized components are "ghost" images that are larger than the diffraction limit, reducing image contrast and resolution.

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