Polarization-sensitive subwavelength antireflection surfaces on a semiconductor for 975 nm

R. E. Smith; M. E. Warren; J. R. Wendt; G. A. Vawter

doi:10.1364/OL.21.001201

Polarization-sensitive subwavelength antireflection surfaces on a semiconductor for 975 nm

R. E. Smith, M. E. Warren, J. R. Wendt, G. A. Vawter

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We present the results of subwavelength antireflection surfaces etched into GaAs for use at 975 nm. These surfaces comprise linear gratings with periods less than the wavelength of light in GaAs. The structure appears as a homogeneous birefringent film. For one of the two polarizations, the film is directly analogous to the well-known quarter-wavelength antireflection coating. For the other polarization there is little effect on the surface reflectivity.

Original language	English (US)
Pages (from-to)	1201-1203
Number of pages	3
Journal	Optics letters
Volume	21
Issue number	15
DOIs	https://doi.org/10.1364/OL.21.001201
State	Published - Aug 1 1996
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "We present the results of subwavelength antireflection surfaces etched into GaAs for use at 975 nm. These surfaces comprise linear gratings with periods less than the wavelength of light in GaAs. The structure appears as a homogeneous birefringent film. For one of the two polarizations, the film is directly analogous to the well-known quarter-wavelength antireflection coating. For the other polarization there is little effect on the surface reflectivity.",

author = "Smith, {R. E.} and Warren, {M. E.} and Wendt, {J. R.} and Vawter, {G. A.}",

year = "1996",

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language = "English (US)",

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AU - Smith, R. E.

AU - Warren, M. E.

AU - Wendt, J. R.

AU - Vawter, G. A.

PY - 1996/8/1

Y1 - 1996/8/1

N2 - We present the results of subwavelength antireflection surfaces etched into GaAs for use at 975 nm. These surfaces comprise linear gratings with periods less than the wavelength of light in GaAs. The structure appears as a homogeneous birefringent film. For one of the two polarizations, the film is directly analogous to the well-known quarter-wavelength antireflection coating. For the other polarization there is little effect on the surface reflectivity.

AB - We present the results of subwavelength antireflection surfaces etched into GaAs for use at 975 nm. These surfaces comprise linear gratings with periods less than the wavelength of light in GaAs. The structure appears as a homogeneous birefringent film. For one of the two polarizations, the film is directly analogous to the well-known quarter-wavelength antireflection coating. For the other polarization there is little effect on the surface reflectivity.

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Polarization-sensitive subwavelength antireflection surfaces on a semiconductor for 975 nm

Abstract

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