Polysilane-based thin films with high photosensitivity

Kelly Potter, G. M. Jamison, Barrett G Potter, W. J. Thomes, C. C. Phifer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

The present work investigates the intrinsic photosensitivity of a family of poly(alkyl)(aryl)silanes and poly(hydridophenyl)silane for use in the development of photoimprinted waveguide devices. Limited testing of passive optical behavior (e.g. absorption, refractive index) and photosensitive response was performed for these materials in thin film form. It was determined that the materials exhibited dramatic photobleaching under 248 nm (KrF excimer laser) exposure. Based on a Kramers-Kronig analysis of the absorption changes, refractive index changes on the order of-0.1 are estimated. Confirmation of this calculation has been provided via ellipsometry which estimates refractive index changes at 632 nm of -0.14 ± 0.01. In addition, embedded strips have been photoimprinted into the material to confirm waveguiding capacity of the films. Possible sources of photosensitivity in this material and its potential for application in various device configurations will be discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC Sanchez, R.M. Laine, S Yang, C.J. Brinker
Pages401-407
Number of pages7
Volume726
StatePublished - 2002
Externally publishedYes
EventOrganic/Inorganic Hybrid Materials 2002 - San Francisco, CA, United States
Duration: Apr 1 2002Apr 5 2002

Other

OtherOrganic/Inorganic Hybrid Materials 2002
CountryUnited States
CitySan Francisco, CA
Period4/1/024/5/02

Fingerprint

Polysilanes
Photosensitivity
Silanes
Thin films
Refractive index
Photobleaching
Ellipsometry
Excimer lasers
Waveguides
Testing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Potter, K., Jamison, G. M., Potter, B. G., Thomes, W. J., & Phifer, C. C. (2002). Polysilane-based thin films with high photosensitivity. In C. Sanchez, R. M. Laine, S. Yang, & C. J. Brinker (Eds.), Materials Research Society Symposium - Proceedings (Vol. 726, pp. 401-407)

Polysilane-based thin films with high photosensitivity. / Potter, Kelly; Jamison, G. M.; Potter, Barrett G; Thomes, W. J.; Phifer, C. C.

Materials Research Society Symposium - Proceedings. ed. / C Sanchez; R.M. Laine; S Yang; C.J. Brinker. Vol. 726 2002. p. 401-407.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Potter, K, Jamison, GM, Potter, BG, Thomes, WJ & Phifer, CC 2002, Polysilane-based thin films with high photosensitivity. in C Sanchez, RM Laine, S Yang & CJ Brinker (eds), Materials Research Society Symposium - Proceedings. vol. 726, pp. 401-407, Organic/Inorganic Hybrid Materials 2002, San Francisco, CA, United States, 4/1/02.
Potter K, Jamison GM, Potter BG, Thomes WJ, Phifer CC. Polysilane-based thin films with high photosensitivity. In Sanchez C, Laine RM, Yang S, Brinker CJ, editors, Materials Research Society Symposium - Proceedings. Vol. 726. 2002. p. 401-407
Potter, Kelly ; Jamison, G. M. ; Potter, Barrett G ; Thomes, W. J. ; Phifer, C. C. / Polysilane-based thin films with high photosensitivity. Materials Research Society Symposium - Proceedings. editor / C Sanchez ; R.M. Laine ; S Yang ; C.J. Brinker. Vol. 726 2002. pp. 401-407
@inproceedings{e7faaa8e3054461188d251a13a57d721,
title = "Polysilane-based thin films with high photosensitivity",
abstract = "The present work investigates the intrinsic photosensitivity of a family of poly(alkyl)(aryl)silanes and poly(hydridophenyl)silane for use in the development of photoimprinted waveguide devices. Limited testing of passive optical behavior (e.g. absorption, refractive index) and photosensitive response was performed for these materials in thin film form. It was determined that the materials exhibited dramatic photobleaching under 248 nm (KrF excimer laser) exposure. Based on a Kramers-Kronig analysis of the absorption changes, refractive index changes on the order of-0.1 are estimated. Confirmation of this calculation has been provided via ellipsometry which estimates refractive index changes at 632 nm of -0.14 ± 0.01. In addition, embedded strips have been photoimprinted into the material to confirm waveguiding capacity of the films. Possible sources of photosensitivity in this material and its potential for application in various device configurations will be discussed.",
author = "Kelly Potter and Jamison, {G. M.} and Potter, {Barrett G} and Thomes, {W. J.} and Phifer, {C. C.}",
year = "2002",
language = "English (US)",
volume = "726",
pages = "401--407",
editor = "C Sanchez and R.M. Laine and S Yang and C.J. Brinker",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Polysilane-based thin films with high photosensitivity

AU - Potter, Kelly

AU - Jamison, G. M.

AU - Potter, Barrett G

AU - Thomes, W. J.

AU - Phifer, C. C.

PY - 2002

Y1 - 2002

N2 - The present work investigates the intrinsic photosensitivity of a family of poly(alkyl)(aryl)silanes and poly(hydridophenyl)silane for use in the development of photoimprinted waveguide devices. Limited testing of passive optical behavior (e.g. absorption, refractive index) and photosensitive response was performed for these materials in thin film form. It was determined that the materials exhibited dramatic photobleaching under 248 nm (KrF excimer laser) exposure. Based on a Kramers-Kronig analysis of the absorption changes, refractive index changes on the order of-0.1 are estimated. Confirmation of this calculation has been provided via ellipsometry which estimates refractive index changes at 632 nm of -0.14 ± 0.01. In addition, embedded strips have been photoimprinted into the material to confirm waveguiding capacity of the films. Possible sources of photosensitivity in this material and its potential for application in various device configurations will be discussed.

AB - The present work investigates the intrinsic photosensitivity of a family of poly(alkyl)(aryl)silanes and poly(hydridophenyl)silane for use in the development of photoimprinted waveguide devices. Limited testing of passive optical behavior (e.g. absorption, refractive index) and photosensitive response was performed for these materials in thin film form. It was determined that the materials exhibited dramatic photobleaching under 248 nm (KrF excimer laser) exposure. Based on a Kramers-Kronig analysis of the absorption changes, refractive index changes on the order of-0.1 are estimated. Confirmation of this calculation has been provided via ellipsometry which estimates refractive index changes at 632 nm of -0.14 ± 0.01. In addition, embedded strips have been photoimprinted into the material to confirm waveguiding capacity of the films. Possible sources of photosensitivity in this material and its potential for application in various device configurations will be discussed.

UR - http://www.scopus.com/inward/record.url?scp=0036437756&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036437756&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036437756

VL - 726

SP - 401

EP - 407

BT - Materials Research Society Symposium - Proceedings

A2 - Sanchez, C

A2 - Laine, R.M.

A2 - Yang, S

A2 - Brinker, C.J.

ER -