Post-CMP cleaning of W and SiO2: a model study

Igor J. Malik, Jackie Zhang, Alan J. Jensen, Jeffrey J. Farber, Wilbur C. Krusell, Srini Raghavan, Chilkunda Rajhunath

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Chemical-Mechanical Planarization (CMP) of SiO2 is performed using alkaline silica slurries while CMP of tungsten (W) utilizes acidic slurries with alumina as the abrasive. Proposed mechanisms for the two CMP processes, with more emphasis on SiO2-CMP, have been discussed in literature. However, much less is known about the removal mechanism of residual slurry particles from the planarized surfaces - a crucial step for subsequent device processing. We discuss the chemical and physical basis of post-CMP cleaning by double-side scrubbing using polyvinyl alcohol (PVA) brushes and show how the interactions between the wafer surface, slurry, and the brush material affect the overall cleaning efficiency. Using the zeta potential concept the common features for cleaning surfaces after SiO2-CMP and W-CMP are established and the differences between these two systems are highlighted. We present surface particle levels for two model systems as a function of cleaning chemistries and discuss their influence on post-CMP surface metal levels.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages109-114
Number of pages6
Volume386
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995

Other

OtherProceedings of the 1995 MRS Spring Meeting
CitySan Francisco, CA, USA
Period4/17/954/21/95

Fingerprint

Chemical mechanical polishing
Cleaning
Slurries
Brushes
Surface cleaning
Polyvinyl Alcohol
Tungsten
Aluminum Oxide
Polyvinyl alcohols
Zeta potential
Abrasives
Silicon Dioxide
Alumina
Metals
Silica
Processing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Malik, I. J., Zhang, J., Jensen, A. J., Farber, J. J., Krusell, W. C., Raghavan, S., & Rajhunath, C. (1995). Post-CMP cleaning of W and SiO2: a model study. In Materials Research Society Symposium - Proceedings (Vol. 386, pp. 109-114). Materials Research Society.

Post-CMP cleaning of W and SiO2 : a model study. / Malik, Igor J.; Zhang, Jackie; Jensen, Alan J.; Farber, Jeffrey J.; Krusell, Wilbur C.; Raghavan, Srini; Rajhunath, Chilkunda.

Materials Research Society Symposium - Proceedings. Vol. 386 Materials Research Society, 1995. p. 109-114.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Malik, IJ, Zhang, J, Jensen, AJ, Farber, JJ, Krusell, WC, Raghavan, S & Rajhunath, C 1995, Post-CMP cleaning of W and SiO2: a model study. in Materials Research Society Symposium - Proceedings. vol. 386, Materials Research Society, pp. 109-114, Proceedings of the 1995 MRS Spring Meeting, San Francisco, CA, USA, 4/17/95.
Malik IJ, Zhang J, Jensen AJ, Farber JJ, Krusell WC, Raghavan S et al. Post-CMP cleaning of W and SiO2: a model study. In Materials Research Society Symposium - Proceedings. Vol. 386. Materials Research Society. 1995. p. 109-114
Malik, Igor J. ; Zhang, Jackie ; Jensen, Alan J. ; Farber, Jeffrey J. ; Krusell, Wilbur C. ; Raghavan, Srini ; Rajhunath, Chilkunda. / Post-CMP cleaning of W and SiO2 : a model study. Materials Research Society Symposium - Proceedings. Vol. 386 Materials Research Society, 1995. pp. 109-114
@inproceedings{d4cbbb33c5e541959b7448d28c2b54da,
title = "Post-CMP cleaning of W and SiO2: a model study",
abstract = "Chemical-Mechanical Planarization (CMP) of SiO2 is performed using alkaline silica slurries while CMP of tungsten (W) utilizes acidic slurries with alumina as the abrasive. Proposed mechanisms for the two CMP processes, with more emphasis on SiO2-CMP, have been discussed in literature. However, much less is known about the removal mechanism of residual slurry particles from the planarized surfaces - a crucial step for subsequent device processing. We discuss the chemical and physical basis of post-CMP cleaning by double-side scrubbing using polyvinyl alcohol (PVA) brushes and show how the interactions between the wafer surface, slurry, and the brush material affect the overall cleaning efficiency. Using the zeta potential concept the common features for cleaning surfaces after SiO2-CMP and W-CMP are established and the differences between these two systems are highlighted. We present surface particle levels for two model systems as a function of cleaning chemistries and discuss their influence on post-CMP surface metal levels.",
author = "Malik, {Igor J.} and Jackie Zhang and Jensen, {Alan J.} and Farber, {Jeffrey J.} and Krusell, {Wilbur C.} and Srini Raghavan and Chilkunda Rajhunath",
year = "1995",
language = "English (US)",
volume = "386",
pages = "109--114",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Post-CMP cleaning of W and SiO2

T2 - a model study

AU - Malik, Igor J.

AU - Zhang, Jackie

AU - Jensen, Alan J.

AU - Farber, Jeffrey J.

AU - Krusell, Wilbur C.

AU - Raghavan, Srini

AU - Rajhunath, Chilkunda

PY - 1995

Y1 - 1995

N2 - Chemical-Mechanical Planarization (CMP) of SiO2 is performed using alkaline silica slurries while CMP of tungsten (W) utilizes acidic slurries with alumina as the abrasive. Proposed mechanisms for the two CMP processes, with more emphasis on SiO2-CMP, have been discussed in literature. However, much less is known about the removal mechanism of residual slurry particles from the planarized surfaces - a crucial step for subsequent device processing. We discuss the chemical and physical basis of post-CMP cleaning by double-side scrubbing using polyvinyl alcohol (PVA) brushes and show how the interactions between the wafer surface, slurry, and the brush material affect the overall cleaning efficiency. Using the zeta potential concept the common features for cleaning surfaces after SiO2-CMP and W-CMP are established and the differences between these two systems are highlighted. We present surface particle levels for two model systems as a function of cleaning chemistries and discuss their influence on post-CMP surface metal levels.

AB - Chemical-Mechanical Planarization (CMP) of SiO2 is performed using alkaline silica slurries while CMP of tungsten (W) utilizes acidic slurries with alumina as the abrasive. Proposed mechanisms for the two CMP processes, with more emphasis on SiO2-CMP, have been discussed in literature. However, much less is known about the removal mechanism of residual slurry particles from the planarized surfaces - a crucial step for subsequent device processing. We discuss the chemical and physical basis of post-CMP cleaning by double-side scrubbing using polyvinyl alcohol (PVA) brushes and show how the interactions between the wafer surface, slurry, and the brush material affect the overall cleaning efficiency. Using the zeta potential concept the common features for cleaning surfaces after SiO2-CMP and W-CMP are established and the differences between these two systems are highlighted. We present surface particle levels for two model systems as a function of cleaning chemistries and discuss their influence on post-CMP surface metal levels.

UR - http://www.scopus.com/inward/record.url?scp=0029478443&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029478443&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029478443

VL - 386

SP - 109

EP - 114

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

ER -