Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)

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9 Scopus citations

Abstract

Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF 4/O 2 plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.

Original languageEnglish (US)
Pages (from-to)81-86
Number of pages6
JournalMicroelectronic Engineering
Volume102
DOIs
StatePublished - Feb 1 2013

Keywords

  • BEOL cleaning
  • Deep eutectic solvent
  • Electrochemical impedance spectroscopy
  • Post-etch residue removal

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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