Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF 4/O 2 plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.

Original languageEnglish (US)
Pages (from-to)81-86
Number of pages6
JournalMicroelectronic Engineering
Volume102
DOIs
StatePublished - Feb 2013

Fingerprint

choline
Choline
eutectics
Eutectics
chlorides
cleaning
acids
Acids
Cleaning
Plasma etching
Chemical potential
plasma etching
Photoresists
Electrochemical impedance spectroscopy
photoresists
submerging
Copper
X ray photoelectron spectroscopy
photoelectron spectroscopy
impedance

Keywords

  • BEOL cleaning
  • Deep eutectic solvent
  • Electrochemical impedance spectroscopy
  • Post-etch residue removal

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES). / Taubert, Jenny; Keswani, Manish K; Raghavan, Srini.

In: Microelectronic Engineering, Vol. 102, 02.2013, p. 81-86.

Research output: Contribution to journalArticle

@article{b5dcb6fb696b4b26b54f189b5f5e338f,
title = "Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)",
abstract = "Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF 4/O 2 plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.",
keywords = "BEOL cleaning, Deep eutectic solvent, Electrochemical impedance spectroscopy, Post-etch residue removal",
author = "Jenny Taubert and Keswani, {Manish K} and Srini Raghavan",
year = "2013",
month = "2",
doi = "10.1016/j.mee.2011.11.014",
language = "English (US)",
volume = "102",
pages = "81--86",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)

AU - Taubert, Jenny

AU - Keswani, Manish K

AU - Raghavan, Srini

PY - 2013/2

Y1 - 2013/2

N2 - Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF 4/O 2 plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.

AB - Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF 4/O 2 plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.

KW - BEOL cleaning

KW - Deep eutectic solvent

KW - Electrochemical impedance spectroscopy

KW - Post-etch residue removal

UR - http://www.scopus.com/inward/record.url?scp=84869079598&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869079598&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2011.11.014

DO - 10.1016/j.mee.2011.11.014

M3 - Article

VL - 102

SP - 81

EP - 86

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -