Post plasma etch residue removal in dilute HF solutions

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Effectiveness of dilute HF solutions in selectively removing fluorine based plasma etch residue films (PER) with respect to copper has been investigated. PER films were generated by CF4/O2 etching of cresol novolak based photoresist films that were spin coated on copper. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) studies were performed to investigate the PER removal using dilute HF solutions (0.05-0.2 vol. ) and the removal was further confirmed using electrochemical impedance spectroscopy. PER removal rate of ∼60 /min was obtained using 0.2 vol HF (pH 2.8). Higher selectivity of PER/Cu was achieved under deaerated conditions compared to aerated conditions.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume158
Issue number8
DOIs
StatePublished - Aug 2011

Fingerprint

Plasmas
cresol
Copper
cresols
copper
Fluorine
Photoresists
Electrochemical impedance spectroscopy
photoresists
fluorine
Etching
X ray photoelectron spectroscopy
selectivity
etching
photoelectron spectroscopy
impedance
Scanning electron microscopy
scanning electron microscopy
spectroscopy
x rays

ASJC Scopus subject areas

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

Post plasma etch residue removal in dilute HF solutions. / Thanu, D. P R; Raghavan, Srini; Keswani, Manish K.

In: Journal of the Electrochemical Society, Vol. 158, No. 8, 08.2011.

Research output: Contribution to journalArticle

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