Post plasma etch residue removal in dilute HF solutions

D. P.R. Thanu, S. Raghavan, M. Keswani

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Effectiveness of dilute HF solutions in selectively removing fluorine based plasma etch residue films (PER) with respect to copper has been investigated. PER films were generated by CF4/O2 etching of cresol novolak based photoresist films that were spin coated on copper. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) studies were performed to investigate the PER removal using dilute HF solutions (0.05-0.2 vol. ) and the removal was further confirmed using electrochemical impedance spectroscopy. PER removal rate of ∼60 /min was obtained using 0.2 vol HF (pH 2.8). Higher selectivity of PER/Cu was achieved under deaerated conditions compared to aerated conditions.

Original languageEnglish (US)
Pages (from-to)H814-H820
JournalJournal of the Electrochemical Society
Volume158
Issue number8
DOIs
StatePublished - Aug 1 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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