Pregate Oxidation Treatment using Radio Frequency Activated Nitrogen in a Rapid Thermal Reactor

Man Wong, Wai Hung Ho, Milton Yeung, Gen Chin, Philip C H Chan, Yitshak Zohar

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A rapid thermal treatment in nitrogen could be inserted immediately before the gate oxidation step in a typical process flow for making metal-oxide-semiconductor field effect transistors. The treatment, performed in a radio frequency induction heated singlewafer rapid thermal reactor, is used to reduce the subsequent oxidation rate and to incorporate nitrogen in the resulting gate dielectrics. It is believed that activated molecular or atomic nitrogen is generated in the rapid thermal reactor and is responsible for the slight nitridalion of the exposed silicon area during the rapid thermal treatment. Potential radiation damage to the silicon area is minimized by activating the nitrogen remotely from the wafer chamber. The effects of the nitrogen flow rate and the temperature during the treatment process on the kinetics of the subsequent oxidation in a regular furnace and the chemical composition of the resulting gate dielectrics are studied. Potential use of the proposed treatment in making scaled devices is discussed.

Original languageEnglish (US)
Pages (from-to)707-709
Number of pages3
JournalJournal of the Electrochemical Society
Volume146
Issue number2
StatePublished - 1999
Externally publishedYes

Fingerprint

thermal reactors
radio frequencies
Nitrogen
nitrogen
Oxidation
oxidation
Gate dielectrics
Silicon
Heat treatment
Radiation damage
MOSFET devices
silicon
radiation damage
metal oxide semiconductors
furnaces
induction
chemical composition
Furnaces
field effect transistors
flow velocity

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Pregate Oxidation Treatment using Radio Frequency Activated Nitrogen in a Rapid Thermal Reactor. / Wong, Man; Ho, Wai Hung; Yeung, Milton; Chin, Gen; Chan, Philip C H; Zohar, Yitshak.

In: Journal of the Electrochemical Society, Vol. 146, No. 2, 1999, p. 707-709.

Research output: Contribution to journalArticle

Wong, Man ; Ho, Wai Hung ; Yeung, Milton ; Chin, Gen ; Chan, Philip C H ; Zohar, Yitshak. / Pregate Oxidation Treatment using Radio Frequency Activated Nitrogen in a Rapid Thermal Reactor. In: Journal of the Electrochemical Society. 1999 ; Vol. 146, No. 2. pp. 707-709.
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