Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films

T. J. Bukowski, T. P. Alexander, Donald R Uhlmann, G. Teowee, K. C. McCarthy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Sol-gel derived Bi4Ti3O12 thin films have been prepared on platinized Si wafers and fired to temperatures ranging from 550 °C to 700 °C. Excess Bi was incorporated in the precursor solutions to determine its effects on dielectric and ferroelectric properties. Multiple spincoating with an intermediate firing of 400 °C between coatings was performed to obtain films up to 0.5 μm thick. Single phase Bi4Ti3O12 films were obtained when fired at 600 °C which exhibited a dielectric constant of 225.

Original languageEnglish (US)
Title of host publicationIEEE International Symposium on Applications of Ferroelectrics
EditorsB.M. Kulwicki, A. Amin, A. Safari
PublisherIEEE
Pages589-592
Number of pages4
Volume2
StatePublished - 1996
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period8/18/968/21/96

Fingerprint

Sol-gels
Thin films
Ferroelectric materials
Permittivity
Coatings
Temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Bukowski, T. J., Alexander, T. P., Uhlmann, D. R., Teowee, G., & McCarthy, K. C. (1996). Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films. In B. M. Kulwicki, A. Amin, & A. Safari (Eds.), IEEE International Symposium on Applications of Ferroelectrics (Vol. 2, pp. 589-592). IEEE.

Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films. / Bukowski, T. J.; Alexander, T. P.; Uhlmann, Donald R; Teowee, G.; McCarthy, K. C.

IEEE International Symposium on Applications of Ferroelectrics. ed. / B.M. Kulwicki; A. Amin; A. Safari. Vol. 2 IEEE, 1996. p. 589-592.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bukowski, TJ, Alexander, TP, Uhlmann, DR, Teowee, G & McCarthy, KC 1996, Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films. in BM Kulwicki, A Amin & A Safari (eds), IEEE International Symposium on Applications of Ferroelectrics. vol. 2, IEEE, pp. 589-592, Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, 8/18/96.
Bukowski TJ, Alexander TP, Uhlmann DR, Teowee G, McCarthy KC. Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films. In Kulwicki BM, Amin A, Safari A, editors, IEEE International Symposium on Applications of Ferroelectrics. Vol. 2. IEEE. 1996. p. 589-592
Bukowski, T. J. ; Alexander, T. P. ; Uhlmann, Donald R ; Teowee, G. ; McCarthy, K. C. / Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films. IEEE International Symposium on Applications of Ferroelectrics. editor / B.M. Kulwicki ; A. Amin ; A. Safari. Vol. 2 IEEE, 1996. pp. 589-592
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