Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films

T. J. Bukowski, T. P. Alexander, D. R. Uhlmann, G. Teowee, K. C. McCarthy

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

Sol-gel derived Bi4Ti3O12 thin films have been prepared on platinized Si wafers and fired to temperatures ranging from 550 °C to 700 °C. Excess Bi was incorporated in the precursor solutions to determine its effects on dielectric and ferroelectric properties. Multiple spincoating with an intermediate firing of 400 °C between coatings was performed to obtain films up to 0.5 μm thick. Single phase Bi4Ti3O12 films were obtained when fired at 600 °C which exhibited a dielectric constant of 225.

Original languageEnglish (US)
Pages589-592
Number of pages4
StatePublished - Dec 1 1996
EventProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA
Duration: Aug 18 1996Aug 21 1996

Other

OtherProceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
CityEast Brunswick, NJ, USA
Period8/18/968/21/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Bukowski, T. J., Alexander, T. P., Uhlmann, D. R., Teowee, G., & McCarthy, K. C. (1996). Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films. 589-592. Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA, .