Preparation and Characterization of Sol-Gel Derived Y2O3 Thin Films

G. Teowee, K. C. McCarthy, F. S. McCarthy, T. J. Bukowski, D. G. Davis, D. R. Uhlmann

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Sol-gel derived Y2O3 thin films have been prepared on platinum coated silicon wafers and fired to temperatures ranging from 400°C to 750°C. Multiple coats were used to obtain films up to 0.5 μm thick with an intermediate firing of 400°C between coatings. Top Pt electrodes were sputtered to form monolithic capacitors. These films exhibited a dielectric constant of 18 and a leakage current of 1011-107 A/cm2, making them attractive candidates for high dielectric constant dielectric films in high density DRAMs.

Original languageEnglish (US)
Pages (from-to)895-898
Number of pages4
JournalJournal of Sol-Gel Science and Technology
Volume13
Issue number1-3
StatePublished - Jan 1998

Keywords

  • Dielectric
  • Ferroelectric
  • Films
  • Yttrium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

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