Preparation and Characterization of Sol-Gel Derived Y2O3 Thin Films

G. Teowee, K. C. McCarthy, F. S. McCarthy, T. J. Bukowski, D. G. Davis, Donald R Uhlmann

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Sol-gel derived Y2O3 thin films have been prepared on platinum coated silicon wafers and fired to temperatures ranging from 400°C to 750°C. Multiple coats were used to obtain films up to 0.5 μm thick with an intermediate firing of 400°C between coatings. Top Pt electrodes were sputtered to form monolithic capacitors. These films exhibited a dielectric constant of 18 and a leakage current of 1011-107 A/cm2, making them attractive candidates for high dielectric constant dielectric films in high density DRAMs.

Original languageEnglish (US)
Pages (from-to)895-898
Number of pages4
JournalJournal of Sol-Gel Science and Technology
Volume13
Issue number1-3
StatePublished - 1999

Fingerprint

Sol-gels
Permittivity
gels
Thin films
preparation
Dielectric films
Dynamic random access storage
thin films
Platinum
Silicon wafers
Leakage currents
permittivity
Capacitors
Coatings
Electrodes
capacitors
platinum
leakage
wafers
coatings

Keywords

  • Dielectric
  • Ferroelectric
  • Films
  • Yttrium oxide

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Teowee, G., McCarthy, K. C., McCarthy, F. S., Bukowski, T. J., Davis, D. G., & Uhlmann, D. R. (1999). Preparation and Characterization of Sol-Gel Derived Y2O3 Thin Films. Journal of Sol-Gel Science and Technology, 13(1-3), 895-898.

Preparation and Characterization of Sol-Gel Derived Y2O3 Thin Films. / Teowee, G.; McCarthy, K. C.; McCarthy, F. S.; Bukowski, T. J.; Davis, D. G.; Uhlmann, Donald R.

In: Journal of Sol-Gel Science and Technology, Vol. 13, No. 1-3, 1999, p. 895-898.

Research output: Contribution to journalArticle

Teowee, G, McCarthy, KC, McCarthy, FS, Bukowski, TJ, Davis, DG & Uhlmann, DR 1999, 'Preparation and Characterization of Sol-Gel Derived Y2O3 Thin Films', Journal of Sol-Gel Science and Technology, vol. 13, no. 1-3, pp. 895-898.
Teowee G, McCarthy KC, McCarthy FS, Bukowski TJ, Davis DG, Uhlmann DR. Preparation and Characterization of Sol-Gel Derived Y2O3 Thin Films. Journal of Sol-Gel Science and Technology. 1999;13(1-3):895-898.
Teowee, G. ; McCarthy, K. C. ; McCarthy, F. S. ; Bukowski, T. J. ; Davis, D. G. ; Uhlmann, Donald R. / Preparation and Characterization of Sol-Gel Derived Y2O3 Thin Films. In: Journal of Sol-Gel Science and Technology. 1999 ; Vol. 13, No. 1-3. pp. 895-898.
@article{ede3c979ed1543aaa2d52d6e263a0dc0,
title = "Preparation and Characterization of Sol-Gel Derived Y2O3 Thin Films",
abstract = "Sol-gel derived Y2O3 thin films have been prepared on platinum coated silicon wafers and fired to temperatures ranging from 400°C to 750°C. Multiple coats were used to obtain films up to 0.5 μm thick with an intermediate firing of 400°C between coatings. Top Pt electrodes were sputtered to form monolithic capacitors. These films exhibited a dielectric constant of 18 and a leakage current of 1011-107 A/cm2, making them attractive candidates for high dielectric constant dielectric films in high density DRAMs.",
keywords = "Dielectric, Ferroelectric, Films, Yttrium oxide",
author = "G. Teowee and McCarthy, {K. C.} and McCarthy, {F. S.} and Bukowski, {T. J.} and Davis, {D. G.} and Uhlmann, {Donald R}",
year = "1999",
language = "English (US)",
volume = "13",
pages = "895--898",
journal = "Journal of Sol-Gel Science and Technology",
issn = "0928-0707",
publisher = "Springer Netherlands",
number = "1-3",

}

TY - JOUR

T1 - Preparation and Characterization of Sol-Gel Derived Y2O3 Thin Films

AU - Teowee, G.

AU - McCarthy, K. C.

AU - McCarthy, F. S.

AU - Bukowski, T. J.

AU - Davis, D. G.

AU - Uhlmann, Donald R

PY - 1999

Y1 - 1999

N2 - Sol-gel derived Y2O3 thin films have been prepared on platinum coated silicon wafers and fired to temperatures ranging from 400°C to 750°C. Multiple coats were used to obtain films up to 0.5 μm thick with an intermediate firing of 400°C between coatings. Top Pt electrodes were sputtered to form monolithic capacitors. These films exhibited a dielectric constant of 18 and a leakage current of 1011-107 A/cm2, making them attractive candidates for high dielectric constant dielectric films in high density DRAMs.

AB - Sol-gel derived Y2O3 thin films have been prepared on platinum coated silicon wafers and fired to temperatures ranging from 400°C to 750°C. Multiple coats were used to obtain films up to 0.5 μm thick with an intermediate firing of 400°C between coatings. Top Pt electrodes were sputtered to form monolithic capacitors. These films exhibited a dielectric constant of 18 and a leakage current of 1011-107 A/cm2, making them attractive candidates for high dielectric constant dielectric films in high density DRAMs.

KW - Dielectric

KW - Ferroelectric

KW - Films

KW - Yttrium oxide

UR - http://www.scopus.com/inward/record.url?scp=0032307613&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032307613&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032307613

VL - 13

SP - 895

EP - 898

JO - Journal of Sol-Gel Science and Technology

JF - Journal of Sol-Gel Science and Technology

SN - 0928-0707

IS - 1-3

ER -