Probing spin currents in semiconductors

Research output: Contribution to journalConference articlepeer-review

26 Scopus citations

Abstract

A novel device for spin-current detection in semiconductors, based on the extraordinary Hall effect, is proposed. When a spin current is injected into a nonmagnetic semiconductor, it is found that a transverse electric field, or Hall voltage, is generated. The Hall voltage is proportional to the spin current in the nonmagnetic semiconductor. The proposed device can be used as a tool to investigate the fundamental spin-diffusion length and spin-dependent Hall coefficients in a semiconductor.

Original languageEnglish (US)
Pages (from-to)7564-7566
Number of pages3
JournalJournal of Applied Physics
Volume89
Issue number11 II
DOIs
StatePublished - Jun 1 2001
Externally publishedYes
Event8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States
Duration: Jan 7 2001Jan 11 2001

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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