Propagation-induced escape from adiabatic following in a semiconductor

P. A. Harten, A. Knorr, J. P. Sokoloff, F. Brown De Colstoun, S. G. Lee, R. Jin, Ewan M Wright, Galina Khitrova, H. M. Gibbs, Stephan W Koch, Nasser N Peyghambarian

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Abstract

Breakup of a below-resonance femtosecond pulse is observed in a room-temperature GaAs/AlGaAs multiple-quantum-well waveguide using cross-correlation techniques. The breakup is due to neither self-induced transparency nor temporal solitons. Instead, calculations based on the coupled semiconductor Maxwell-Bloch equations show that coherent self-phase-modulation during propagation drives the system out of the initial adiabatic following regime into excitation density oscillations and eventually pulse-shape modulations.

Original languageEnglish (US)
Pages (from-to)852-855
Number of pages4
JournalPhysical Review Letters
Volume69
Issue number5
DOIs
Publication statusPublished - 1992

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Harten, P. A., Knorr, A., Sokoloff, J. P., Brown De Colstoun, F., Lee, S. G., Jin, R., ... Peyghambarian, N. N. (1992). Propagation-induced escape from adiabatic following in a semiconductor. Physical Review Letters, 69(5), 852-855. https://doi.org/10.1103/PhysRevLett.69.852