Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering

Weigang Wang, K. J. Han, K. J. Yee, C. Ni, Q. Wen, H. W. Zhang, Y. Zhang, L. Shah, John Q. Xiao

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the fabrication of (Zn,Cr)Te films at room temperature by magnetron sputtering. Various structural and elemental characterizations revealed there was only a zinc blende phase from the ZnTe host and Cr atoms were distributed uniformly in these films. The magnetization measurement by superconducting quantum interference device magnetometer clearly showed that the samples were ferromagnetic at low temperatures with Curie temperature around 150 K. The magnetic circular dichroism measurements confirmed that the observed ferromagnetism was originated from the interaction of substitutional Cr ions and ZnTe host. Transport measurement revealed typical semiconductor behaviors with the large negative magnetoresistance observed.

Original languageEnglish (US)
Article number102507
JournalApplied Physics Letters
Volume92
Issue number10
DOIs
StatePublished - 2008
Externally publishedYes

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magnetron sputtering
room temperature
magnetometers
ferromagnetism
dichroism
Curie temperature
zinc
interference
magnetization
fabrication
atoms
ions
interactions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering. / Wang, Weigang; Han, K. J.; Yee, K. J.; Ni, C.; Wen, Q.; Zhang, H. W.; Zhang, Y.; Shah, L.; Xiao, John Q.

In: Applied Physics Letters, Vol. 92, No. 10, 102507, 2008.

Research output: Contribution to journalArticle

Wang, W, Han, KJ, Yee, KJ, Ni, C, Wen, Q, Zhang, HW, Zhang, Y, Shah, L & Xiao, JQ 2008, 'Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering', Applied Physics Letters, vol. 92, no. 10, 102507. https://doi.org/10.1063/1.2890087
Wang, Weigang ; Han, K. J. ; Yee, K. J. ; Ni, C. ; Wen, Q. ; Zhang, H. W. ; Zhang, Y. ; Shah, L. ; Xiao, John Q. / Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering. In: Applied Physics Letters. 2008 ; Vol. 92, No. 10.
@article{b376f8439dcf4c9698b99b61bea29741,
title = "Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering",
abstract = "We report the fabrication of (Zn,Cr)Te films at room temperature by magnetron sputtering. Various structural and elemental characterizations revealed there was only a zinc blende phase from the ZnTe host and Cr atoms were distributed uniformly in these films. The magnetization measurement by superconducting quantum interference device magnetometer clearly showed that the samples were ferromagnetic at low temperatures with Curie temperature around 150 K. The magnetic circular dichroism measurements confirmed that the observed ferromagnetism was originated from the interaction of substitutional Cr ions and ZnTe host. Transport measurement revealed typical semiconductor behaviors with the large negative magnetoresistance observed.",
author = "Weigang Wang and Han, {K. J.} and Yee, {K. J.} and C. Ni and Q. Wen and Zhang, {H. W.} and Y. Zhang and L. Shah and Xiao, {John Q.}",
year = "2008",
doi = "10.1063/1.2890087",
language = "English (US)",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Properties of (Zn,Cr)Te semiconductor deposited at room temperature by magnetron sputtering

AU - Wang, Weigang

AU - Han, K. J.

AU - Yee, K. J.

AU - Ni, C.

AU - Wen, Q.

AU - Zhang, H. W.

AU - Zhang, Y.

AU - Shah, L.

AU - Xiao, John Q.

PY - 2008

Y1 - 2008

N2 - We report the fabrication of (Zn,Cr)Te films at room temperature by magnetron sputtering. Various structural and elemental characterizations revealed there was only a zinc blende phase from the ZnTe host and Cr atoms were distributed uniformly in these films. The magnetization measurement by superconducting quantum interference device magnetometer clearly showed that the samples were ferromagnetic at low temperatures with Curie temperature around 150 K. The magnetic circular dichroism measurements confirmed that the observed ferromagnetism was originated from the interaction of substitutional Cr ions and ZnTe host. Transport measurement revealed typical semiconductor behaviors with the large negative magnetoresistance observed.

AB - We report the fabrication of (Zn,Cr)Te films at room temperature by magnetron sputtering. Various structural and elemental characterizations revealed there was only a zinc blende phase from the ZnTe host and Cr atoms were distributed uniformly in these films. The magnetization measurement by superconducting quantum interference device magnetometer clearly showed that the samples were ferromagnetic at low temperatures with Curie temperature around 150 K. The magnetic circular dichroism measurements confirmed that the observed ferromagnetism was originated from the interaction of substitutional Cr ions and ZnTe host. Transport measurement revealed typical semiconductor behaviors with the large negative magnetoresistance observed.

UR - http://www.scopus.com/inward/record.url?scp=40849088248&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40849088248&partnerID=8YFLogxK

U2 - 10.1063/1.2890087

DO - 10.1063/1.2890087

M3 - Article

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 102507

ER -