Quantitative Auger electron spectroscopy and Rutherford backscattering of potassium-implanted silicon, silica and sodium trisilicate

Brad J. Burrow, Neal R. Armstrong, Rod K. Quinn, Bruce C. Bunker, George W. Arnold, Doug R. Salmi

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Samples of silicon, silica, and sodium trisilicate, which were ion implanted with potassium, were analyzed by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectroscopy (RBS). Depth profiles obtained by both techniques showed that approximately 50% of the implanted potassium migrated from the subsurface implant region to the surface for both the silica and sodium trisilicate samples. Less migration was detected for the silicon samples. Analyses of the results suggest that some of the ion migration observed in Auger depth profiles is induced by the analysis technique. With this exception, it is demonstrated that a combination of AES and RBS techniques can provide quantitative compositional analyses for altered glass surfaces.

Original languageEnglish (US)
Pages (from-to)167-180
Number of pages14
JournalApplications of Surface Science
Volume20
Issue number1-2
DOIs
StatePublished - Dec 1984

ASJC Scopus subject areas

  • Engineering(all)

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