Quantitative in-situ measurement of asperity compression under the wafer during polishing

Caprice Gray, Daniel Apone, Chris Rogers, Vincent P. Manno, Chris Barns, Mansour Moinpour, Sriram Anjur, Ara Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The interaction of the wafer, slurry and pad determines the material removal rate during Chemical Mechanical Planarization (CMP). Dual emission laser induced fluorescence (DELIF) provides a means to measure the slurry layer thickness between the wafer and a Fruedenbergy FX9 pad during CMP with high spatial (4.3 μm/pixel) and temporal resolution (2 Hz). In this paper we present some preliminary measurements of pad compression using DELIF to measure the standard deviation of asperity height. Static slurry layer images were captured at high (70 kPa) and low (0 kPa) down-force applied to the wafer. In-situ, dynamic images at 10 kPa down-force applied to etched wafers were imaged. Two wafers were etched such that they contain square wells, one wafer with 27 μm and the other will 14.5 μm deep wells. In the static case, asperity compression is directly related the amount of fluid displaced. In the dynamic case, asperity compression is 35% greater under the 27 μm wells than the 14.5 μm wells.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsA. Kumar, J.A. Lee, Y.S. Obeng, I. Vos, E.C. Johns
Pages247-252
Number of pages6
Volume867
StatePublished - 2005
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Mar 31 2005

Other

Other2005 Materials Research Society Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/28/053/31/05

Fingerprint

Chemical mechanical polishing
Polishing
Compaction
Fluorescence
Lasers
Pixels
Fluids

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Gray, C., Apone, D., Rogers, C., Manno, V. P., Barns, C., Moinpour, M., ... Philipossian, A. (2005). Quantitative in-situ measurement of asperity compression under the wafer during polishing. In A. Kumar, J. A. Lee, Y. S. Obeng, I. Vos, & E. C. Johns (Eds.), Materials Research Society Symposium Proceedings (Vol. 867, pp. 247-252). [W5.4]

Quantitative in-situ measurement of asperity compression under the wafer during polishing. / Gray, Caprice; Apone, Daniel; Rogers, Chris; Manno, Vincent P.; Barns, Chris; Moinpour, Mansour; Anjur, Sriram; Philipossian, Ara.

Materials Research Society Symposium Proceedings. ed. / A. Kumar; J.A. Lee; Y.S. Obeng; I. Vos; E.C. Johns. Vol. 867 2005. p. 247-252 W5.4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gray, C, Apone, D, Rogers, C, Manno, VP, Barns, C, Moinpour, M, Anjur, S & Philipossian, A 2005, Quantitative in-situ measurement of asperity compression under the wafer during polishing. in A Kumar, JA Lee, YS Obeng, I Vos & EC Johns (eds), Materials Research Society Symposium Proceedings. vol. 867, W5.4, pp. 247-252, 2005 Materials Research Society Spring Meeting, San Francisco, CA, United States, 3/28/05.
Gray C, Apone D, Rogers C, Manno VP, Barns C, Moinpour M et al. Quantitative in-situ measurement of asperity compression under the wafer during polishing. In Kumar A, Lee JA, Obeng YS, Vos I, Johns EC, editors, Materials Research Society Symposium Proceedings. Vol. 867. 2005. p. 247-252. W5.4
Gray, Caprice ; Apone, Daniel ; Rogers, Chris ; Manno, Vincent P. ; Barns, Chris ; Moinpour, Mansour ; Anjur, Sriram ; Philipossian, Ara. / Quantitative in-situ measurement of asperity compression under the wafer during polishing. Materials Research Society Symposium Proceedings. editor / A. Kumar ; J.A. Lee ; Y.S. Obeng ; I. Vos ; E.C. Johns. Vol. 867 2005. pp. 247-252
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