Quantitative investigation of the recombination involving free particle scattering processes in highly excited blend type II-VI compounds

Claus F. Klingshirn, Walter Maier, Bernd Hönerlage, Hartmut Haug, Stephan W Koch

Research output: Contribution to journalArticle

15 Scopus citations


Inelastic scattering processes involving free excitons and either free carriers or excitons are important radiative recombination processes in highly excited direct gap semiconductors. Using ZnTe as a model substance, we have investigated the luminescence under low and high excitation intensities from liquid helium to room temperature. The comparison between our experimental results and two theories published recently shows that the observed recombination processes are dominantly due to inelastic exciton-exciton scattering at lower temperatures (T ≤ 40 K) and due to exciton-hole scattering at higher temperatures (T > 40 K). We find good agreement between experiment and theory in the lineshape and the spectral position of the emission maxima as function of temperature.

Original languageEnglish (US)
Pages (from-to)1357-1360
Number of pages4
JournalSolid-State Electronics
Issue number11-12
Publication statusPublished - 1978
Externally publishedYes


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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