Abstract
A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated.
Original language | English (US) |
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Pages (from-to) | 762-764 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 14 |
Issue number | 6 |
DOIs | |
State | Published - Jun 1 2002 |
Keywords
- Gain
- Photo luminescence
- Semiconductor lasers
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering