Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements

J. Hader; A. R. Zakharian; J. V. Moloney; T. R. Nelson; W. J. Siskaninetz; J. E. Ehret; K. Hantke; M. Hofmann; S. W. Koch

doi:10.1109/LPT.2002.1003085

Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements

J. Hader, A. R. Zakharian, J. V. Moloney, T. R. Nelson, W. J. Siskaninetz, J. E. Ehret, K. Hantke, M. Hofmann, S. W. Koch

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated.

Original language	English (US)
Pages (from-to)	762-764
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	6
DOIs	https://doi.org/10.1109/LPT.2002.1003085
State	Published - Jun 1 2002

Keywords

Gain
Photo luminescence
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2002.1003085

Fingerprint Dive into the research topics of 'Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements'. Together they form a unique fingerprint.

Cite this

Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements. / Hader, J.; Zakharian, A. R.; Moloney, J. V.; Nelson, T. R.; Siskaninetz, W. J.; Ehret, J. E.; Hantke, K.; Hofmann, M.; Koch, S. W.

In: IEEE Photonics Technology Letters, Vol. 14, No. 6, 01.06.2002, p. 762-764.

Research output: Contribution to journal › Article › peer-review

@article{a30e61a650f34f34a1a786b46a725124,

title = "Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements",

abstract = "A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated.",

keywords = "Gain, Photo luminescence, Semiconductor lasers",

author = "J. Hader and Zakharian, {A. R.} and Moloney, {J. V.} and Nelson, {T. R.} and Siskaninetz, {W. J.} and Ehret, {J. E.} and K. Hantke and M. Hofmann and Koch, {S. W.}",

year = "2002",

month = jun,

day = "1",

doi = "10.1109/LPT.2002.1003085",

language = "English (US)",

volume = "14",

pages = "762--764",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements

AU - Hader, J.

AU - Zakharian, A. R.

AU - Moloney, J. V.

AU - Nelson, T. R.

AU - Siskaninetz, W. J.

AU - Ehret, J. E.

AU - Hantke, K.

AU - Hofmann, M.

AU - Koch, S. W.

PY - 2002/6/1

Y1 - 2002/6/1

N2 - A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated.

AB - A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated.

KW - Gain

KW - Photo luminescence

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0036610962&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036610962&partnerID=8YFLogxK

U2 - 10.1109/LPT.2002.1003085

DO - 10.1109/LPT.2002.1003085

M3 - Article

AN - SCOPUS:0036610962

VL - 14

SP - 762

EP - 764

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 6

ER -