Abstract
A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 762-764 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 14 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 1 2002 |
Keywords
- Gain
- Photo luminescence
- Semiconductor lasers
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Cite this
Hader, J., Zakharian, A. R., Moloney, J. V., Nelson, T. R., Siskaninetz, W. J., Ehret, J. E., Hantke, K., Hofmann, M., & Koch, S. W. (2002). Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements. IEEE Photonics Technology Letters, 14(6), 762-764. https://doi.org/10.1109/LPT.2002.1003085