Quantum confinement and strain effects on the lateral mode stability of an unstable resonator semiconductor laser

P. Ru, W. W. Chow, Jerome V Moloney, Stephan W Koch

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

This paper addresses the question of how the gain structure affects the lateral mode stability of an unstable resonator semiconductor laser, particularly the effects of quantum confinement and strain. This is aimed at determining the gain structure more tolerant to the optical resonator geometry or one which allow single mode operation at a higher excitation. A laser model based on a many-body theory of the optical properties of semiconductors was used. Applying this theory to a variety of semiconductor materials, the absorption, gain, and refractive index spectra were computed and compared to experimental data.

Original languageEnglish (US)
Pages (from-to)1469-1471
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number12
DOIs
StatePublished - Jan 1 1994

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resonators
semiconductor lasers
optical resonators
refractivity
optical properties
geometry
excitation
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Quantum confinement and strain effects on the lateral mode stability of an unstable resonator semiconductor laser. / Ru, P.; Chow, W. W.; Moloney, Jerome V; Koch, Stephan W.

In: Applied Physics Letters, Vol. 64, No. 12, 01.01.1994, p. 1469-1471.

Research output: Contribution to journalArticle

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