Quantum design of active semiconductor materials for targeted wavelengths

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Performance metrics of every class of semiconductor amplifier or laser system depend critically on semiconductor QW optical properties such as photoluminescence (PL), gain and recombination losses (radiative and nonradiative). Current practice in amplifier or laser design assumes phenomenological parameterized models for these critical optical properties and has to rely on experimental measurement to extract model fit parameters. In this tutorial, I will present an overview of a powerful and sophisticated first-principles quantum design approach that allows one to extract these critical optical properties without relying on prior experimental measurement. It will be shown that an end device L-I characteristic can be predicted with the only input being intrinsic background losses, extracted from cut-back experiments. We will show that text book and literature models of semiconductor amplifiers and lasers are seriously flawed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages97-117
Number of pages21
Volume1076
StatePublished - 2008
EventMaterials and Devices for Laser Remote Sensing and Optical Communication - San Francisco, CA, United States
Duration: Mar 25 2008Mar 27 2008

Other

OtherMaterials and Devices for Laser Remote Sensing and Optical Communication
CountryUnited States
CitySan Francisco, CA
Period3/25/083/27/08

Fingerprint

Optical properties
Semiconductor materials
optical properties
Wavelength
Lasers
amplifiers
wavelengths
lasers
amplifier design
Photoluminescence
photoluminescence
Experiments

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Moloney, J. V., Hader, J., & Koch, S. W. (2008). Quantum design of active semiconductor materials for targeted wavelengths. In Materials Research Society Symposium Proceedings (Vol. 1076, pp. 97-117)

Quantum design of active semiconductor materials for targeted wavelengths. / Moloney, Jerome V; Hader, Jorg; Koch, Stephan W.

Materials Research Society Symposium Proceedings. Vol. 1076 2008. p. 97-117.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Moloney, JV, Hader, J & Koch, SW 2008, Quantum design of active semiconductor materials for targeted wavelengths. in Materials Research Society Symposium Proceedings. vol. 1076, pp. 97-117, Materials and Devices for Laser Remote Sensing and Optical Communication, San Francisco, CA, United States, 3/25/08.
Moloney JV, Hader J, Koch SW. Quantum design of active semiconductor materials for targeted wavelengths. In Materials Research Society Symposium Proceedings. Vol. 1076. 2008. p. 97-117
Moloney, Jerome V ; Hader, Jorg ; Koch, Stephan W. / Quantum design of active semiconductor materials for targeted wavelengths. Materials Research Society Symposium Proceedings. Vol. 1076 2008. pp. 97-117
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