Quantum design of active semiconductor materials for targeted wavelengths

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Performance metrics of every class of semiconductor amplifier or laser system depend critically on semiconductor QW optical properties such as photoluminescence (PL), gain and recombination losses (radiative and nonradiative). Current practice in amplifier or laser design assumes phenomenological parameterized models for these critical optical properties and has to rely on experimental measurement to extract model fit parameters. In this tutorial, I will present an overview of a powerful and sophisticated first-principles quantum design approach that allows one to extract these critical optical properties without relying on prior experimental measurement. It will be shown that an end device L-I characteristic can be predicted with the only input being intrinsic background losses, extracted from cut-back experiments. We will show that text book and literature models of semiconductor amplifiers and lasers are seriously flawed.

Original languageEnglish (US)
Title of host publicationMaterials and Devices for Laser Remote Sensing and Optical Communication
PublisherMaterials Research Society
Pages97-117
Number of pages21
ISBN (Print)9781605110462
DOIs
StatePublished - Jan 1 2008
EventMaterials and Devices for Laser Remote Sensing and Optical Communication - San Francisco, CA, United States
Duration: Mar 25 2008Mar 27 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1076
ISSN (Print)0272-9172

Other

OtherMaterials and Devices for Laser Remote Sensing and Optical Communication
CountryUnited States
CitySan Francisco, CA
Period3/25/083/27/08

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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