Quantum design of active semiconductor materials for targeted wavelengths: A predictive design tool for edge emitters and OPSLs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Performance metrics of every class of semiconductor amplifier or laser system depend critically on semiconductor QW optical properties such as photoluminescence (PL), gain and recombination losses (radiative and nonradiative). Current practice in amplifier or laser design assumes phenomenological parameterized models for these critical optical properties and has to rely on experimental measurement to extract model fit parameters. In this tutorial, I will present an overview of a powerful and sophisticated first-principles quantum design approach that allows one to extract these critical optical properties without relying on prior experimental measurement. It will be shown that an end device L-I characteristic can be predicted with the only input being intrinsic background losses, extracted from cut-back experiments. We will show that textbook and literature models of semiconductor amplifiers and lasers are seriously flawed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2008
EventSolid State Lasers XVII: Technology and Devices - San Jose, CA, United States
Duration: Jan 20 2008Jan 24 2008


OtherSolid State Lasers XVII: Technology and Devices
CountryUnited States
CitySan Jose, CA



  • Microscopic theory
  • Photoluminescence spectra
  • Recombination losses
  • Semiconductor gain
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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