Quantum design of semiconductor active materials: Laser and amplifier applications

Research output: Contribution to journalReview articlepeer-review

60 Scopus citations

Abstract

We present an overview of a novel first-principles quantum approach to designing and optimizing semiconductor quantum-well material systems for target wavelengths. Using these microscopic inputs as basic building blocks we predict the light-current (LI) characteristic for a low power InGaPAs ridge laser without having to use adjustable fit parameters. Finally we employ these microscopic inputs to develop sophisticated simulation capabilities for designing and optimizing end packaged high power laser structures. As an explicit example of the latter, we consider the design of a vertical external cavity semiconductor laser (VECSEL). A graph is presented. Experimental (circles and squares) and theoretical (solid lines) photoluminescence (green/blue) and modal gain (black/red) for a 5-nm wide InGaAs quantum well sandwiched between GaAs barriers.

Original languageEnglish (US)
Pages (from-to)24-43
Number of pages20
JournalLaser and Photonics Reviews
Volume1
Issue number1
DOIs
StatePublished - Dec 1 2007

Keywords

  • Gain spectra
  • Microscopic modelling
  • Photo luminescence
  • Quantum-well lasers
  • Semiconductor lasers
  • VECSEL (verticalexternal cavity surface emitting lasers)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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