Quantum design of semiconductor active materials

Laser and amplifier applications

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

We present an overview of a novel first-principles quantum approach to designing and optimizing semiconductor quantum-well material systems for target wavelengths. Using these microscopic inputs as basic building blocks we predict the light-current (LI) characteristic for a low power InGaPAs ridge laser without having to use adjustable fit parameters. Finally we employ these microscopic inputs to develop sophisticated simulation capabilities for designing and optimizing end packaged high power laser structures. As an explicit example of the latter, we consider the design of a vertical external cavity semiconductor laser (VECSEL). A graph is presented. Experimental (circles and squares) and theoretical (solid lines) photoluminescence (green/blue) and modal gain (black/red) for a 5-nm wide InGaAs quantum well sandwiched between GaAs barriers.

Original languageEnglish (US)
Pages (from-to)24-43
Number of pages20
JournalLaser and Photonics Reviews
Volume1
Issue number1
DOIs
StatePublished - 2007

Fingerprint

laser applications
Semiconductor quantum wells
amplifiers
quantum wells
Semiconductor materials
Lasers
High power lasers
high power lasers
Semiconductor lasers
ridges
Photoluminescence
semiconductor lasers
photoluminescence
Wavelength
cavities
wavelengths
lasers
simulation
gallium arsenide

Keywords

  • Gain spectra
  • Microscopic modelling
  • Photo luminescence
  • Quantum-well lasers
  • Semiconductor lasers
  • VECSEL (verticalexternal cavity surface emitting lasers)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Quantum design of semiconductor active materials: Laser and amplifier applications",
abstract = "We present an overview of a novel first-principles quantum approach to designing and optimizing semiconductor quantum-well material systems for target wavelengths. Using these microscopic inputs as basic building blocks we predict the light-current (LI) characteristic for a low power InGaPAs ridge laser without having to use adjustable fit parameters. Finally we employ these microscopic inputs to develop sophisticated simulation capabilities for designing and optimizing end packaged high power laser structures. As an explicit example of the latter, we consider the design of a vertical external cavity semiconductor laser (VECSEL). A graph is presented. Experimental (circles and squares) and theoretical (solid lines) photoluminescence (green/blue) and modal gain (black/red) for a 5-nm wide InGaAs quantum well sandwiched between GaAs barriers.",
keywords = "Gain spectra, Microscopic modelling, Photo luminescence, Quantum-well lasers, Semiconductor lasers, VECSEL (verticalexternal cavity surface emitting lasers)",
author = "Moloney, {Jerome V} and Jorg Hader and Koch, {Stephan W}",
year = "2007",
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pages = "24--43",
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T1 - Quantum design of semiconductor active materials

T2 - Laser and amplifier applications

AU - Moloney, Jerome V

AU - Hader, Jorg

AU - Koch, Stephan W

PY - 2007

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N2 - We present an overview of a novel first-principles quantum approach to designing and optimizing semiconductor quantum-well material systems for target wavelengths. Using these microscopic inputs as basic building blocks we predict the light-current (LI) characteristic for a low power InGaPAs ridge laser without having to use adjustable fit parameters. Finally we employ these microscopic inputs to develop sophisticated simulation capabilities for designing and optimizing end packaged high power laser structures. As an explicit example of the latter, we consider the design of a vertical external cavity semiconductor laser (VECSEL). A graph is presented. Experimental (circles and squares) and theoretical (solid lines) photoluminescence (green/blue) and modal gain (black/red) for a 5-nm wide InGaAs quantum well sandwiched between GaAs barriers.

AB - We present an overview of a novel first-principles quantum approach to designing and optimizing semiconductor quantum-well material systems for target wavelengths. Using these microscopic inputs as basic building blocks we predict the light-current (LI) characteristic for a low power InGaPAs ridge laser without having to use adjustable fit parameters. Finally we employ these microscopic inputs to develop sophisticated simulation capabilities for designing and optimizing end packaged high power laser structures. As an explicit example of the latter, we consider the design of a vertical external cavity semiconductor laser (VECSEL). A graph is presented. Experimental (circles and squares) and theoretical (solid lines) photoluminescence (green/blue) and modal gain (black/red) for a 5-nm wide InGaAs quantum well sandwiched between GaAs barriers.

KW - Gain spectra

KW - Microscopic modelling

KW - Photo luminescence

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KW - Semiconductor lasers

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