Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors

Harald Giessen, Ulrike Woggon, Brian Fluegel, Georg Mohs, Yuan Z. Hu, Stephan W. Koch, Nasser Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a multitude of one-electron-hole pair and two-electron-hole pair transitions, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsWeng W. Chow, Marek Osinski
Pages233-237
Number of pages5
StatePublished - Jan 1 1996
EventPhysics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA
Duration: Jan 29 1996Feb 2 1996

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2693

Other

OtherPhysics and Simulation of Optoelectronic Devices IV
CitySan Jose, CA, USA
Period1/29/962/2/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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    Giessen, H., Woggon, U., Fluegel, B., Mohs, G., Hu, Y. Z., Koch, S. W., & Peyghambarian, N. (1996). Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors. In W. W. Chow, & M. Osinski (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 233-237). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2693).