Quantum dots in the strong confinement regime

a model system for gain in quasi-zero-dimensional semiconductors

Harald Giessen, Ulrike Woggon, Brian Fluegel, Georg Mohs, Yuan Z. Hu, Stephan W Koch, Nasser N Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a multitude of one-electron-hole pair and two-electron-hole pair transitions, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsWeng W. Chow, Marek Osinski
Pages233-237
Number of pages5
Volume2693
StatePublished - 1996
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA
Duration: Jan 29 1996Feb 2 1996

Other

OtherPhysics and Simulation of Optoelectronic Devices IV
CitySan Jose, CA, USA
Period1/29/962/2/96

Fingerprint

Semiconductor quantum dots
Semiconductor materials
Electrons
Electron transitions
Experiments

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Giessen, H., Woggon, U., Fluegel, B., Mohs, G., Hu, Y. Z., Koch, S. W., & Peyghambarian, N. N. (1996). Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors. In W. W. Chow, & M. Osinski (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2693, pp. 233-237)

Quantum dots in the strong confinement regime : a model system for gain in quasi-zero-dimensional semiconductors. / Giessen, Harald; Woggon, Ulrike; Fluegel, Brian; Mohs, Georg; Hu, Yuan Z.; Koch, Stephan W; Peyghambarian, Nasser N.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Weng W. Chow; Marek Osinski. Vol. 2693 1996. p. 233-237.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Giessen, H, Woggon, U, Fluegel, B, Mohs, G, Hu, YZ, Koch, SW & Peyghambarian, NN 1996, Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors. in WW Chow & M Osinski (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 2693, pp. 233-237, Physics and Simulation of Optoelectronic Devices IV, San Jose, CA, USA, 1/29/96.
Giessen H, Woggon U, Fluegel B, Mohs G, Hu YZ, Koch SW et al. Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors. In Chow WW, Osinski M, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2693. 1996. p. 233-237
Giessen, Harald ; Woggon, Ulrike ; Fluegel, Brian ; Mohs, Georg ; Hu, Yuan Z. ; Koch, Stephan W ; Peyghambarian, Nasser N. / Quantum dots in the strong confinement regime : a model system for gain in quasi-zero-dimensional semiconductors. Proceedings of SPIE - The International Society for Optical Engineering. editor / Weng W. Chow ; Marek Osinski. Vol. 2693 1996. pp. 233-237
@inproceedings{ad01af629cb04953ae9420de39a202ea,
title = "Quantum dots in the strong confinement regime: a model system for gain in quasi-zero-dimensional semiconductors",
abstract = "We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a multitude of one-electron-hole pair and two-electron-hole pair transitions, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.",
author = "Harald Giessen and Ulrike Woggon and Brian Fluegel and Georg Mohs and Hu, {Yuan Z.} and Koch, {Stephan W} and Peyghambarian, {Nasser N}",
year = "1996",
language = "English (US)",
isbn = "0819420670",
volume = "2693",
pages = "233--237",
editor = "Chow, {Weng W.} and Marek Osinski",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Quantum dots in the strong confinement regime

T2 - a model system for gain in quasi-zero-dimensional semiconductors

AU - Giessen, Harald

AU - Woggon, Ulrike

AU - Fluegel, Brian

AU - Mohs, Georg

AU - Hu, Yuan Z.

AU - Koch, Stephan W

AU - Peyghambarian, Nasser N

PY - 1996

Y1 - 1996

N2 - We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a multitude of one-electron-hole pair and two-electron-hole pair transitions, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.

AB - We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a multitude of one-electron-hole pair and two-electron-hole pair transitions, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.

UR - http://www.scopus.com/inward/record.url?scp=0029768125&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029768125&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0819420670

VL - 2693

SP - 233

EP - 237

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Chow, Weng W.

A2 - Osinski, Marek

ER -