Quantum dots in the strong confinement regime: A model system for gain in quasi zero-dimensional semiconductors

H. Giessen, U. Woggon, B. Fluegel, G. Mohs, Y. Z. Hu, Stephan W Koch, Nasser N Peyghambarian

Research output: Contribution to journalArticle

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Abstract

We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a combination of a multitude of one-electron-hole pair and two-electron-hole pair transitions and inhomogeneous broadening, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.

Original languageEnglish (US)
Pages (from-to)71-78
Number of pages8
JournalChemical Physics
Volume210
Issue number1-2 SPEC. ISS.
StatePublished - Oct 1 1996

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ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

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