Quantum dots in the strong confinement regime: A model system for gain in quasi zero-dimensional semiconductors

H. Giessen, U. Woggon, B. Fluegel, G. Mohs, Y. Z. Hu, Stephan W Koch, Nasser N Peyghambarian

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a combination of a multitude of one-electron-hole pair and two-electron-hole pair transitions and inhomogeneous broadening, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.

Original languageEnglish (US)
Pages (from-to)71-78
Number of pages8
JournalChemical Physics
Volume210
Issue number1-2 SPEC. ISS.
StatePublished - Oct 1 1996

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Semiconductor quantum dots
quantum dots
Semiconductor materials
Electrons
Electron transitions
Experiments
predictions

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

Quantum dots in the strong confinement regime : A model system for gain in quasi zero-dimensional semiconductors. / Giessen, H.; Woggon, U.; Fluegel, B.; Mohs, G.; Hu, Y. Z.; Koch, Stephan W; Peyghambarian, Nasser N.

In: Chemical Physics, Vol. 210, No. 1-2 SPEC. ISS., 01.10.1996, p. 71-78.

Research output: Contribution to journalArticle

Giessen H, Woggon U, Fluegel B, Mohs G, Hu YZ, Koch SW et al. Quantum dots in the strong confinement regime: A model system for gain in quasi zero-dimensional semiconductors. Chemical Physics. 1996 Oct 1;210(1-2 SPEC. ISS.):71-78.
Giessen, H. ; Woggon, U. ; Fluegel, B. ; Mohs, G. ; Hu, Y. Z. ; Koch, Stephan W ; Peyghambarian, Nasser N. / Quantum dots in the strong confinement regime : A model system for gain in quasi zero-dimensional semiconductors. In: Chemical Physics. 1996 ; Vol. 210, No. 1-2 SPEC. ISS. pp. 71-78.
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