We present a model for gain in a quasi zero-dimensional quantum confined semiconductor system. Due to a combination of a multitude of one-electron-hole pair and two-electron-hole pair transitions and inhomogeneous broadening, the gain region is broad, quasi-continuous and stretches below the absorption edge. Femtosecond experiments in the gain region of strongly confined CdSe quantum dots confirm our theoretical predictions.
|Original language||English (US)|
|Number of pages||8|
|Issue number||1-2 SPEC. ISS.|
|State||Published - Oct 1 1996|
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Atomic and Molecular Physics, and Optics