Quantum kinetics of semiconductor light emission and lasing

K. Henneberger, Stephan W Koch

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

Semiconductor light emission is analyzed as a paradigm of a nonequilibrium quantum mechanical many-body problem. The medium excitations and the quantized light field inside and outside a semiconductor slab are treated consistently. Splitting the photon density of states into a medium and a vacuum induced contribution the arbitrarily strong semiconductor emission is described as spontaneous emission into the vacuum induced part. With increasing gain narrowing peaks of growing intensity evolve for each propagation direction, whereas under laser conditions one propagation direction is favored by the cavity.

Original languageEnglish (US)
Pages (from-to)1820-1823
Number of pages4
JournalPhysical Review Letters
Volume76
Issue number11
StatePublished - Mar 11 1996
Externally publishedYes

Fingerprint

light emission
lasing
kinetics
photon density
vacuum
many body problem
propagation
spontaneous emission
slabs
cavities
excitation
lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Quantum kinetics of semiconductor light emission and lasing. / Henneberger, K.; Koch, Stephan W.

In: Physical Review Letters, Vol. 76, No. 11, 11.03.1996, p. 1820-1823.

Research output: Contribution to journalArticle

@article{5f662b0f22f7467a925048848567cf35,
title = "Quantum kinetics of semiconductor light emission and lasing",
abstract = "Semiconductor light emission is analyzed as a paradigm of a nonequilibrium quantum mechanical many-body problem. The medium excitations and the quantized light field inside and outside a semiconductor slab are treated consistently. Splitting the photon density of states into a medium and a vacuum induced contribution the arbitrarily strong semiconductor emission is described as spontaneous emission into the vacuum induced part. With increasing gain narrowing peaks of growing intensity evolve for each propagation direction, whereas under laser conditions one propagation direction is favored by the cavity.",
author = "K. Henneberger and Koch, {Stephan W}",
year = "1996",
month = "3",
day = "11",
language = "English (US)",
volume = "76",
pages = "1820--1823",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "11",

}

TY - JOUR

T1 - Quantum kinetics of semiconductor light emission and lasing

AU - Henneberger, K.

AU - Koch, Stephan W

PY - 1996/3/11

Y1 - 1996/3/11

N2 - Semiconductor light emission is analyzed as a paradigm of a nonequilibrium quantum mechanical many-body problem. The medium excitations and the quantized light field inside and outside a semiconductor slab are treated consistently. Splitting the photon density of states into a medium and a vacuum induced contribution the arbitrarily strong semiconductor emission is described as spontaneous emission into the vacuum induced part. With increasing gain narrowing peaks of growing intensity evolve for each propagation direction, whereas under laser conditions one propagation direction is favored by the cavity.

AB - Semiconductor light emission is analyzed as a paradigm of a nonequilibrium quantum mechanical many-body problem. The medium excitations and the quantized light field inside and outside a semiconductor slab are treated consistently. Splitting the photon density of states into a medium and a vacuum induced contribution the arbitrarily strong semiconductor emission is described as spontaneous emission into the vacuum induced part. With increasing gain narrowing peaks of growing intensity evolve for each propagation direction, whereas under laser conditions one propagation direction is favored by the cavity.

UR - http://www.scopus.com/inward/record.url?scp=0030109954&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030109954&partnerID=8YFLogxK

M3 - Article

VL - 76

SP - 1820

EP - 1823

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 11

ER -