Quantum modeling of semiconductor gain materials and vertical-external- cavity surface-emitting laser systems

Christina Bückers, Eckhard Kühn, Christoph Schlichenmaier, Sebastian Imhof, Angela Thränhardt, Jörg Hader, Jerome V. Moloney, Oleg Rubel, Wei Zhang, Thorsten Ackemann, Stephan W. Koch

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

This article gives an overview of the microscopic theory used to quantitatively model a wide range of semiconductor laser gain materials. As a snapshot of the current state of research, applications to a variety of actual quantum-well systems are presented. Detailed theory-experiment comparisons are shown and it is analyzed how the theory can be used to extract poorly known material parameters. The intrinsic laser loss processes due to radiative and nonradiative Auger recombination are evaluated microscopically. The results are used for realistic simulations of vertical-external-cavity surface-emitting laser systems. To account for nonequilibrium effects, a simplified model is presented using pre-computed microscopic scattering and dephasing rates. Prominent deviations from quasi-equili- brium carrier distributions are obtained under strong in-well pumping conditions.

Original languageEnglish (US)
Pages (from-to)789-808
Number of pages20
JournalPhysica Status Solidi (B) Basic Research
Volume247
Issue number4
DOIs
StatePublished - Apr 1 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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