Quantum-well intermixing for optoelectronic integration using high energy ion implantation

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J. J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, I. V. Mitchell

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Abstract

The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2-8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy.

Original languageEnglish (US)
Pages (from-to)3697-3705
Number of pages9
JournalJournal of Applied Physics
Volume78
Issue number6
DOIs
StatePublished - Dec 1 1995
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Charbonneau, S., Poole, P. J., Piva, P. G., Aers, G. C., Koteles, E. S., Fallahi, M., He, J. J., McCaffrey, J. P., Buchanan, M., Dion, M., Goldberg, R. D., & Mitchell, I. V. (1995). Quantum-well intermixing for optoelectronic integration using high energy ion implantation. Journal of Applied Physics, 78(6), 3697-3705. https://doi.org/10.1063/1.359948