Abstract
By examining the interaction of two copropagating ultrafast optical pulses in a semiconductor multiple quantum well, we experimentally determine the temporal dependence of the induced polarization. Based on this technique we observe that the optically induced density goes through a maximum at sufficiently high excitation intensity. Microscopic calculations show that the observed phenomena are a manifestation of Rabi flopping in semiconductors.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1178-1181 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 73 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1994 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Rabi flopping in semiconductors. / Cundiff, S. T.; Knorr, A.; Feldmann, J.; Koch, Stephan W; Göbel, E. O.; Nickel, H.
In: Physical Review Letters, Vol. 73, No. 8, 1994, p. 1178-1181.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Rabi flopping in semiconductors
AU - Cundiff, S. T.
AU - Knorr, A.
AU - Feldmann, J.
AU - Koch, Stephan W
AU - Göbel, E. O.
AU - Nickel, H.
PY - 1994
Y1 - 1994
N2 - By examining the interaction of two copropagating ultrafast optical pulses in a semiconductor multiple quantum well, we experimentally determine the temporal dependence of the induced polarization. Based on this technique we observe that the optically induced density goes through a maximum at sufficiently high excitation intensity. Microscopic calculations show that the observed phenomena are a manifestation of Rabi flopping in semiconductors.
AB - By examining the interaction of two copropagating ultrafast optical pulses in a semiconductor multiple quantum well, we experimentally determine the temporal dependence of the induced polarization. Based on this technique we observe that the optically induced density goes through a maximum at sufficiently high excitation intensity. Microscopic calculations show that the observed phenomena are a manifestation of Rabi flopping in semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=0000147372&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000147372&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.73.1178
DO - 10.1103/PhysRevLett.73.1178
M3 - Article
AN - SCOPUS:0000147372
VL - 73
SP - 1178
EP - 1181
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 8
ER -