Rabi flopping in semiconductors

S. T. Cundiff; A. Knorr; J. Feldmann; S. W. Koch; E. O. Göbel; H. Nickel

doi:10.1103/PhysRevLett.73.1178

Rabi flopping in semiconductors

S. T. Cundiff, A. Knorr, J. Feldmann, S. W. Koch, E. O. Göbel, H. Nickel

Optical Sciences, College of

Research output: Contribution to journal › Article

141 Scopus citations

Abstract

By examining the interaction of two copropagating ultrafast optical pulses in a semiconductor multiple quantum well, we experimentally determine the temporal dependence of the induced polarization. Based on this technique we observe that the optically induced density goes through a maximum at sufficiently high excitation intensity. Microscopic calculations show that the observed phenomena are a manifestation of Rabi flopping in semiconductors.

Original language	English (US)
Pages (from-to)	1178-1181
Number of pages	4
Journal	Physical review letters
Volume	73
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevLett.73.1178
State	Published - Jan 1 1994

ASJC Scopus subject areas

Physics and Astronomy(all)

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Cundiff, S. T., Knorr, A., Feldmann, J., Koch, S. W., Göbel, E. O., & Nickel, H. (1994). Rabi flopping in semiconductors. Physical review letters, 73(8), 1178-1181. https://doi.org/10.1103/PhysRevLett.73.1178

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