Rabi oscillations and Raman coherences in semiconductor quantum wells

Research output: Contribution to conferencePaperpeer-review

Abstract

The relationship between generalized Rabi oscillations involving optical transitions in three band systems and Raman coherences is investigated. The system under observation is a conventional GaAs semiconductor quantum well in which only the lowest subband of the conduction, the heavy-hole (hh) and light-hole (lh) bands need to be taken into account. Two simultaneous, strong sub-picosecond pulses of opposite circular polarization, spectrally centered at the hh and the lh-excitons, respectively, are considered. In this configuration, both the intervalence-band Raman coherence and excitonic Rabi oscillations are created.

Original languageEnglish (US)
Number of pages1
StatePublished - Jan 1 1999
EventProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA
Duration: May 23 1999May 28 1999

Other

OtherProceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99)
CityBaltimore, MD, USA
Period5/23/995/28/99

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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