Raman-Nath theory of degenerate four-wave mixing in semiconductors

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A theory of degenerate four-wave mixing in the Raman-Nath approximation is developed that includes transverse effects and excitation-dependent optical material properties. A microscopic model is used for the nonlinear absorption and refractive-index changes of laser-excited semiconductors. Diffusion of the excitation density is assumed to be the dominant transverse coupling mechanism. Numerical simulations of the Raman-Nath scattering spectrum are presented for the example of room-temperature bulk GaAs using steady-state illumination. The shortcomings of the standard analysis at high excitation are demonstrated.

Original languageEnglish (US)
Pages (from-to)1620-1628
Number of pages9
JournalPhysical Review A
Volume41
Issue number3
DOIs
Publication statusPublished - 1990

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Atomic and Molecular Physics, and Optics

Cite this