Raman-Nath theory of degenerate four-wave mixing in semiconductors

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A theory of degenerate four-wave mixing in the Raman-Nath approximation is developed that includes transverse effects and excitation-dependent optical material properties. A microscopic model is used for the nonlinear absorption and refractive-index changes of laser-excited semiconductors. Diffusion of the excitation density is assumed to be the dominant transverse coupling mechanism. Numerical simulations of the Raman-Nath scattering spectrum are presented for the example of room-temperature bulk GaAs using steady-state illumination. The shortcomings of the standard analysis at high excitation are demonstrated.

Original languageEnglish (US)
Pages (from-to)1620-1628
Number of pages9
JournalPhysical Review A
Volume41
Issue number3
DOIs
StatePublished - 1990

Fingerprint

four-wave mixing
excitation
optical materials
illumination
refractivity
Raman spectra
room temperature
approximation
lasers
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Atomic and Molecular Physics, and Optics

Cite this

Raman-Nath theory of degenerate four-wave mixing in semiconductors. / Richardson, D.; Wright, Ewan M; Koch, Stephan W.

In: Physical Review A, Vol. 41, No. 3, 1990, p. 1620-1628.

Research output: Contribution to journalArticle

@article{4e38c27a888d45e8abacc9cbee882a7c,
title = "Raman-Nath theory of degenerate four-wave mixing in semiconductors",
abstract = "A theory of degenerate four-wave mixing in the Raman-Nath approximation is developed that includes transverse effects and excitation-dependent optical material properties. A microscopic model is used for the nonlinear absorption and refractive-index changes of laser-excited semiconductors. Diffusion of the excitation density is assumed to be the dominant transverse coupling mechanism. Numerical simulations of the Raman-Nath scattering spectrum are presented for the example of room-temperature bulk GaAs using steady-state illumination. The shortcomings of the standard analysis at high excitation are demonstrated.",
author = "D. Richardson and Wright, {Ewan M} and Koch, {Stephan W}",
year = "1990",
doi = "10.1103/PhysRevA.41.1620",
language = "English (US)",
volume = "41",
pages = "1620--1628",
journal = "Physical Review A",
issn = "2469-9926",
publisher = "American Physical Society",
number = "3",

}

TY - JOUR

T1 - Raman-Nath theory of degenerate four-wave mixing in semiconductors

AU - Richardson, D.

AU - Wright, Ewan M

AU - Koch, Stephan W

PY - 1990

Y1 - 1990

N2 - A theory of degenerate four-wave mixing in the Raman-Nath approximation is developed that includes transverse effects and excitation-dependent optical material properties. A microscopic model is used for the nonlinear absorption and refractive-index changes of laser-excited semiconductors. Diffusion of the excitation density is assumed to be the dominant transverse coupling mechanism. Numerical simulations of the Raman-Nath scattering spectrum are presented for the example of room-temperature bulk GaAs using steady-state illumination. The shortcomings of the standard analysis at high excitation are demonstrated.

AB - A theory of degenerate four-wave mixing in the Raman-Nath approximation is developed that includes transverse effects and excitation-dependent optical material properties. A microscopic model is used for the nonlinear absorption and refractive-index changes of laser-excited semiconductors. Diffusion of the excitation density is assumed to be the dominant transverse coupling mechanism. Numerical simulations of the Raman-Nath scattering spectrum are presented for the example of room-temperature bulk GaAs using steady-state illumination. The shortcomings of the standard analysis at high excitation are demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=5344276822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5344276822&partnerID=8YFLogxK

U2 - 10.1103/PhysRevA.41.1620

DO - 10.1103/PhysRevA.41.1620

M3 - Article

AN - SCOPUS:5344276822

VL - 41

SP - 1620

EP - 1628

JO - Physical Review A

JF - Physical Review A

SN - 2469-9926

IS - 3

ER -