Raman temperature measurement during photostructural changes in Ge xSe1-x glass

Craig R. Schardt, Pierre Lucas, Anand Doraiswamy, Pranuda Jivaganont, Joseph H. Simmons

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Direct measurement of sample temperature was performed during sub-bandgap photoinduced structural changes in bulk Ge-Se glasses. The temperature was determined by analysis of the Raman signal scattered from the microvolume of the sample undergoing photostructural change. The temperature measurement was done with 800 nm laser light at three different intensities. The sub-bandgap laser light induced photodarkening, photorelaxation, and photoexpansion in the glass samples but did not increase the temperature significantly. The temperature measurements of the irradiated microvolume represent a direct observation of the athermal nature of photoinduced structural changes in bulk Ge-Se glasses.

Original languageEnglish (US)
Pages (from-to)1653-1657
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume351
Issue number19-20
DOIs
StatePublished - Jul 1 2005

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Temperature measurement
temperature measurement
Glass
glass
Energy gap
Photochromism
Lasers
Temperature
lasers
temperature

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Raman temperature measurement during photostructural changes in Ge xSe1-x glass. / Schardt, Craig R.; Lucas, Pierre; Doraiswamy, Anand; Jivaganont, Pranuda; Simmons, Joseph H.

In: Journal of Non-Crystalline Solids, Vol. 351, No. 19-20, 01.07.2005, p. 1653-1657.

Research output: Contribution to journalArticle

Schardt, Craig R. ; Lucas, Pierre ; Doraiswamy, Anand ; Jivaganont, Pranuda ; Simmons, Joseph H. / Raman temperature measurement during photostructural changes in Ge xSe1-x glass. In: Journal of Non-Crystalline Solids. 2005 ; Vol. 351, No. 19-20. pp. 1653-1657.
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