Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films

Xin Zhang, Tone Yi Zhang, Yitshak Zohar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The residual stress in doped and undoped polysilicon films, before and after rapid thermal annealing (RTA), is investigated using both wafer-curvature and micro-rotating structures techniques. Microstructure characterization has been conducted as well to understand the mechanism of the stress evolution. The results show that the compressive residual stresses in undoped polysilicon films can be reduced or eliminated within a few seconds RTA. Surface nitridation and grain growth are identified as the mechanisms responsible for the stress evolution.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages27-32
Number of pages6
Volume546
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1998 MRS Fall Meeting - Symposium AA,Materials Science of Microelectromechanical Systems (MEMS) - Boston, MA, USA
Duration: Dec 1 1998Dec 2 1998

Other

OtherProceedings of the 1998 MRS Fall Meeting - Symposium AA,Materials Science of Microelectromechanical Systems (MEMS)
CityBoston, MA, USA
Period12/1/9812/2/98

Fingerprint

Rapid thermal annealing
Stress relaxation
Polysilicon
Residual stresses
Thin films
Nitridation
Grain growth
Compressive stress
Microstructure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Zhang, X., Zhang, T. Y., & Zohar, Y. (1999). Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films. In Materials Research Society Symposium - Proceedings (Vol. 546, pp. 27-32). Materials Research Society.

Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films. / Zhang, Xin; Zhang, Tone Yi; Zohar, Yitshak.

Materials Research Society Symposium - Proceedings. Vol. 546 Materials Research Society, 1999. p. 27-32.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, X, Zhang, TY & Zohar, Y 1999, Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films. in Materials Research Society Symposium - Proceedings. vol. 546, Materials Research Society, pp. 27-32, Proceedings of the 1998 MRS Fall Meeting - Symposium AA,Materials Science of Microelectromechanical Systems (MEMS), Boston, MA, USA, 12/1/98.
Zhang X, Zhang TY, Zohar Y. Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films. In Materials Research Society Symposium - Proceedings. Vol. 546. Materials Research Society. 1999. p. 27-32
Zhang, Xin ; Zhang, Tone Yi ; Zohar, Yitshak. / Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films. Materials Research Society Symposium - Proceedings. Vol. 546 Materials Research Society, 1999. pp. 27-32
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