Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films

Xin Zhang, Tone Yi Zhang, Yitshak Zohar

Research output: Contribution to journalConference article

Abstract

The residual stress in doped and undoped polysilicon films, before and after rapid thermal annealing (RTA), is investigated using both wafer-curvature and micro-rotating structures techniques. Microstructure characterization has been conducted as well to understand the mechanism of the stress evolution. The results show that the compressive residual stresses in undoped polysilicon films can be reduced or eliminated within a few seconds RTA. Surface nitridation and grain growth are identified as the mechanisms responsible for the stress evolution.

Original languageEnglish (US)
Pages (from-to)27-32
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume546
StatePublished - Dec 1 1999
Externally publishedYes
EventProceedings of the 1998 MRS Fall Meeting - Symposium AA,Materials Science of Microelectromechanical Systems (MEMS) - Boston, MA, USA
Duration: Dec 1 1998Dec 2 1998

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Rapid thermal annealing for residual-stress relaxation in undoped or doped polysilicon thin films'. Together they form a unique fingerprint.

  • Cite this