Reaction mechanisms on binary III-V semiconductor surfaces during etching, passivation, and deposition

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Etching of the natives oxides of the III-V semiconductor InGaAs using aqueous and gas phase HF were compared using x-ray photoelectron spectroscopy, ellipsometry, and atomic force microscopy. The mechanisms in both phases are driven by bond polarity. This explains why the surface is terminated by the group V atom, in this case arsenic. The solubility of the fluorides of the substrate atoms in water removes the reaction products. The fluorides of Ga were not volatile at room temperature and remain on the surface after gas phase etching. Annealing to 170 °C desorbed these fluorides. Atomic layer deposition of Al2O3 converted the oxides left on the surface and etched the fluorides. The interface was indium rich after aqueous phase HF etching but near stoichiometric after gas phase HF etching.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages217-226
Number of pages10
Volume69
Edition8
ISBN (Print)9781607685395
DOIs
StatePublished - 2015
EventSymposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Other

OtherSymposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

ASJC Scopus subject areas

  • Engineering(all)

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