Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions

Weigang Wang, C. Ni, A. Rumaiz, Y. Wang, X. Fan, T. Moriyama, R. Cao, Q. Y. Wen, H. W. Zhang, John Q. Xiao

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

We report the study of the real-time evolution of tunneling magnetoresistance (TMR) in CoFeBMgOCoFeB junctions during annealing at 380 °C. The TMR quickly developed at the early stage of the annealing, with 200% magnetoresistance observed in less than 10 min, followed by a slow approach to saturation. This evolution of TMR was correlated with the structural changes, including crystallization of amorphous CoFeB electrodes and improvement of barrier quality during the annealing.

Original languageEnglish (US)
Article number152501
JournalApplied Physics Letters
Volume92
Issue number15
DOIs
StatePublished - 2008
Externally publishedYes

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tunnel junctions
annealing
crystallization
saturation
electrodes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions. / Wang, Weigang; Ni, C.; Rumaiz, A.; Wang, Y.; Fan, X.; Moriyama, T.; Cao, R.; Wen, Q. Y.; Zhang, H. W.; Xiao, John Q.

In: Applied Physics Letters, Vol. 92, No. 15, 152501, 2008.

Research output: Contribution to journalArticle

Wang, W, Ni, C, Rumaiz, A, Wang, Y, Fan, X, Moriyama, T, Cao, R, Wen, QY, Zhang, HW & Xiao, JQ 2008, 'Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions', Applied Physics Letters, vol. 92, no. 15, 152501. https://doi.org/10.1063/1.2903147
Wang, Weigang ; Ni, C. ; Rumaiz, A. ; Wang, Y. ; Fan, X. ; Moriyama, T. ; Cao, R. ; Wen, Q. Y. ; Zhang, H. W. ; Xiao, John Q. / Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions. In: Applied Physics Letters. 2008 ; Vol. 92, No. 15.
@article{fbb615d63508473aa66c297e25bd7608,
title = "Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions",
abstract = "We report the study of the real-time evolution of tunneling magnetoresistance (TMR) in CoFeBMgOCoFeB junctions during annealing at 380 °C. The TMR quickly developed at the early stage of the annealing, with 200{\%} magnetoresistance observed in less than 10 min, followed by a slow approach to saturation. This evolution of TMR was correlated with the structural changes, including crystallization of amorphous CoFeB electrodes and improvement of barrier quality during the annealing.",
author = "Weigang Wang and C. Ni and A. Rumaiz and Y. Wang and X. Fan and T. Moriyama and R. Cao and Wen, {Q. Y.} and Zhang, {H. W.} and Xiao, {John Q.}",
year = "2008",
doi = "10.1063/1.2903147",
language = "English (US)",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions

AU - Wang, Weigang

AU - Ni, C.

AU - Rumaiz, A.

AU - Wang, Y.

AU - Fan, X.

AU - Moriyama, T.

AU - Cao, R.

AU - Wen, Q. Y.

AU - Zhang, H. W.

AU - Xiao, John Q.

PY - 2008

Y1 - 2008

N2 - We report the study of the real-time evolution of tunneling magnetoresistance (TMR) in CoFeBMgOCoFeB junctions during annealing at 380 °C. The TMR quickly developed at the early stage of the annealing, with 200% magnetoresistance observed in less than 10 min, followed by a slow approach to saturation. This evolution of TMR was correlated with the structural changes, including crystallization of amorphous CoFeB electrodes and improvement of barrier quality during the annealing.

AB - We report the study of the real-time evolution of tunneling magnetoresistance (TMR) in CoFeBMgOCoFeB junctions during annealing at 380 °C. The TMR quickly developed at the early stage of the annealing, with 200% magnetoresistance observed in less than 10 min, followed by a slow approach to saturation. This evolution of TMR was correlated with the structural changes, including crystallization of amorphous CoFeB electrodes and improvement of barrier quality during the annealing.

UR - http://www.scopus.com/inward/record.url?scp=42349113560&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42349113560&partnerID=8YFLogxK

U2 - 10.1063/1.2903147

DO - 10.1063/1.2903147

M3 - Article

AN - SCOPUS:42349113560

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 152501

ER -