Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions

W. G. Wang, C. Ni, A. Rumaiz, Y. Wang, X. Fan, T. Moriyama, R. Cao, Q. Y. Wen, H. W. Zhang, John Q. Xiao

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Abstract

We report the study of the real-time evolution of tunneling magnetoresistance (TMR) in CoFeBMgOCoFeB junctions during annealing at 380 °C. The TMR quickly developed at the early stage of the annealing, with 200% magnetoresistance observed in less than 10 min, followed by a slow approach to saturation. This evolution of TMR was correlated with the structural changes, including crystallization of amorphous CoFeB electrodes and improvement of barrier quality during the annealing.

Original languageEnglish (US)
Article number152501
JournalApplied Physics Letters
Volume92
Issue number15
DOIs
StatePublished - Apr 24 2008
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Wang, W. G., Ni, C., Rumaiz, A., Wang, Y., Fan, X., Moriyama, T., Cao, R., Wen, Q. Y., Zhang, H. W., & Xiao, J. Q. (2008). Real-time evolution of tunneling magnetoresistance during annealing in CoFeBMgOCoFeB magnetic tunnel junctions. Applied Physics Letters, 92(15), [152501]. https://doi.org/10.1063/1.2903147