Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure

Michael J. Hill, Richard W Ziolkowski, John Papapolymerou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in a MBG crystal, the transmission properties of the crystal can be changed. Using this concept, a microwave band gap crystal utilizing PIN diode defect structures has been simulated, fabricated, and tested. Through the control of the PIN diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with FDTD simulation results.

Original languageEnglish (US)
Title of host publication2000 30th European Microwave Conference, EuMC 2000
PublisherIEEE Computer Society
DOIs
StatePublished - 2000
Event2000 30th European Microwave Conference, EuMC 2000 - Paris, France
Duration: Oct 2 2000Oct 5 2000

Other

Other2000 30th European Microwave Conference, EuMC 2000
CountryFrance
CityParis
Period10/2/0010/5/00

Fingerprint

Diodes
Energy gap
Microwaves
Defects
Crystals
Bias currents
Crystal defects
Defect structures
Crystal structure
Experiments

Keywords

  • Controlled defect
  • Microwave band gap

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Hill, M. J., Ziolkowski, R. W., & Papapolymerou, J. (2000). Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure. In 2000 30th European Microwave Conference, EuMC 2000 [4139791] IEEE Computer Society. https://doi.org/10.1109/EUMA.2000.338778

Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure. / Hill, Michael J.; Ziolkowski, Richard W; Papapolymerou, John.

2000 30th European Microwave Conference, EuMC 2000. IEEE Computer Society, 2000. 4139791.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hill, MJ, Ziolkowski, RW & Papapolymerou, J 2000, Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure. in 2000 30th European Microwave Conference, EuMC 2000., 4139791, IEEE Computer Society, 2000 30th European Microwave Conference, EuMC 2000, Paris, France, 10/2/00. https://doi.org/10.1109/EUMA.2000.338778
Hill MJ, Ziolkowski RW, Papapolymerou J. Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure. In 2000 30th European Microwave Conference, EuMC 2000. IEEE Computer Society. 2000. 4139791 https://doi.org/10.1109/EUMA.2000.338778
Hill, Michael J. ; Ziolkowski, Richard W ; Papapolymerou, John. / Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure. 2000 30th European Microwave Conference, EuMC 2000. IEEE Computer Society, 2000.
@inproceedings{6398eb39b0f748d1b173cf6c03a4993d,
title = "Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure",
abstract = "Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in a MBG crystal, the transmission properties of the crystal can be changed. Using this concept, a microwave band gap crystal utilizing PIN diode defect structures has been simulated, fabricated, and tested. Through the control of the PIN diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with FDTD simulation results.",
keywords = "Controlled defect, Microwave band gap",
author = "Hill, {Michael J.} and Ziolkowski, {Richard W} and John Papapolymerou",
year = "2000",
doi = "10.1109/EUMA.2000.338778",
language = "English (US)",
booktitle = "2000 30th European Microwave Conference, EuMC 2000",
publisher = "IEEE Computer Society",

}

TY - GEN

T1 - Realization of an active narrow band filter with electronically controlled defects in a microwave bandgap structure

AU - Hill, Michael J.

AU - Ziolkowski, Richard W

AU - Papapolymerou, John

PY - 2000

Y1 - 2000

N2 - Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in a MBG crystal, the transmission properties of the crystal can be changed. Using this concept, a microwave band gap crystal utilizing PIN diode defect structures has been simulated, fabricated, and tested. Through the control of the PIN diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with FDTD simulation results.

AB - Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in a MBG crystal, the transmission properties of the crystal can be changed. Using this concept, a microwave band gap crystal utilizing PIN diode defect structures has been simulated, fabricated, and tested. Through the control of the PIN diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with FDTD simulation results.

KW - Controlled defect

KW - Microwave band gap

UR - http://www.scopus.com/inward/record.url?scp=84897531513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84897531513&partnerID=8YFLogxK

U2 - 10.1109/EUMA.2000.338778

DO - 10.1109/EUMA.2000.338778

M3 - Conference contribution

BT - 2000 30th European Microwave Conference, EuMC 2000

PB - IEEE Computer Society

ER -