Recent results of blue and green InGaN laser diodes for laser projection

Stephan Lutgen, Dimitri Dini, Ines Pietzonka, Soenke Tautz, Andreas Breidenassel, Alfred Lell, Adrian Avramescu, Christoph Eichler, Teresa Lermer, Jens Müller, Georg Bruederl, Alvaro Gomez, Uwe Strauss, Wolfgang G. Scheibenzuber, Ulrich T. Schwarz, Bernhard Pasenow, Stephan W Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

41 Citations (Scopus)

Abstract

Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile applications is the optical output power and the wall plug efficiency of blue and green lasers. We report on improvements of the performance of true blue riedge waveguide InGaN lasers at 452nm with cw-output power up to 800mW in overstress and mono mode operation up to 500mW in a temperatures range of 20°C to 80°C. We succeeded in high and almost temperature independent wall plug efficiencies >20% at stable output power levels from 200 to 500mW in cw-operation. Due to several improvements of our blue laser diodes we now estimate life times is in the order of 40khrs for 80mW output power in cw-operation at 40°C. Additional overstress degradation tests at power levels up to 200mW show a strong dependency of lifetime with output power. Furthermore, we present pioneering results on true green InGaN laser diodes on c-plane GaN-substrates. The technological challenge is to achieve In-rich InGaN-quantum wells with sufficiently high material quality for lasing. We investigated the competing recombination processes below laser threshold like nonradiative defect recombination by electro-optical measurements, such confirming that low defect densities are essential for stimulated emission. A model for alloy fluctuations in In-rich InGaN-MQWs based on spectral and time resolved photoluminescence measurements yields potential fluctuations in the order of E0=57meV for our blue laser diodes. To get a closer insight into the physics of direct green InGaN-Laser we investigated the inhomogeneous broadening of experimentally measured gain curves via Hakki-Paoli-measurements in comparison to calculated gain spectra based on microscopic theory showing the importance of strong LO-phonon coupling in this material system. Investigations of current dependent gain measurements and calculations yield a factor of 2 higher inhomogeneous broadening for our green lasers than for our blue laser diodes on c-plane GaN. Based on the improvements of the material quality and design we demonstrate true green InGaN-Laser in cw-operation at 522nm with more than 80mW output power on c-plane GaN. The combination of low laser threshold ∼60-80mA, high slope efficiency ∼0.65W/A and low operating voltage 6.9-6.4V of our green monomode RWG-Laser results in a high wall plug efficiency of 5-6% in a temperature range of 20-60°C.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7953
DOIs
StatePublished - 2011
Externally publishedYes
EventNovel In-Plane Semiconductor Lasers X - San Francisco, CA, United States
Duration: Jan 25 2011Jan 28 2011

Other

OtherNovel In-Plane Semiconductor Lasers X
CountryUnited States
CitySan Francisco, CA
Period1/25/111/28/11

Fingerprint

InGaN
Laser Diode
Semiconductor lasers
projection
semiconductor lasers
Projection
Laser
Lasers
lasers
output
plugs
Output
Recombination
Defects
life (durability)
Fluctuations
Gain measurement
thresholds
waveguide lasers
defects

Keywords

  • GaN
  • RWG laser
  • Semiconductor laser

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Lutgen, S., Dini, D., Pietzonka, I., Tautz, S., Breidenassel, A., Lell, A., ... Koch, S. W. (2011). Recent results of blue and green InGaN laser diodes for laser projection. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7953). [79530G] https://doi.org/10.1117/12.874757

Recent results of blue and green InGaN laser diodes for laser projection. / Lutgen, Stephan; Dini, Dimitri; Pietzonka, Ines; Tautz, Soenke; Breidenassel, Andreas; Lell, Alfred; Avramescu, Adrian; Eichler, Christoph; Lermer, Teresa; Müller, Jens; Bruederl, Georg; Gomez, Alvaro; Strauss, Uwe; Scheibenzuber, Wolfgang G.; Schwarz, Ulrich T.; Pasenow, Bernhard; Koch, Stephan W.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7953 2011. 79530G.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lutgen, S, Dini, D, Pietzonka, I, Tautz, S, Breidenassel, A, Lell, A, Avramescu, A, Eichler, C, Lermer, T, Müller, J, Bruederl, G, Gomez, A, Strauss, U, Scheibenzuber, WG, Schwarz, UT, Pasenow, B & Koch, SW 2011, Recent results of blue and green InGaN laser diodes for laser projection. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7953, 79530G, Novel In-Plane Semiconductor Lasers X, San Francisco, CA, United States, 1/25/11. https://doi.org/10.1117/12.874757
Lutgen S, Dini D, Pietzonka I, Tautz S, Breidenassel A, Lell A et al. Recent results of blue and green InGaN laser diodes for laser projection. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7953. 2011. 79530G https://doi.org/10.1117/12.874757
Lutgen, Stephan ; Dini, Dimitri ; Pietzonka, Ines ; Tautz, Soenke ; Breidenassel, Andreas ; Lell, Alfred ; Avramescu, Adrian ; Eichler, Christoph ; Lermer, Teresa ; Müller, Jens ; Bruederl, Georg ; Gomez, Alvaro ; Strauss, Uwe ; Scheibenzuber, Wolfgang G. ; Schwarz, Ulrich T. ; Pasenow, Bernhard ; Koch, Stephan W. / Recent results of blue and green InGaN laser diodes for laser projection. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7953 2011.
@inproceedings{cf4849551171454993cf8475eceb7c41,
title = "Recent results of blue and green InGaN laser diodes for laser projection",
abstract = "Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile applications is the optical output power and the wall plug efficiency of blue and green lasers. We report on improvements of the performance of true blue riedge waveguide InGaN lasers at 452nm with cw-output power up to 800mW in overstress and mono mode operation up to 500mW in a temperatures range of 20°C to 80°C. We succeeded in high and almost temperature independent wall plug efficiencies >20{\%} at stable output power levels from 200 to 500mW in cw-operation. Due to several improvements of our blue laser diodes we now estimate life times is in the order of 40khrs for 80mW output power in cw-operation at 40°C. Additional overstress degradation tests at power levels up to 200mW show a strong dependency of lifetime with output power. Furthermore, we present pioneering results on true green InGaN laser diodes on c-plane GaN-substrates. The technological challenge is to achieve In-rich InGaN-quantum wells with sufficiently high material quality for lasing. We investigated the competing recombination processes below laser threshold like nonradiative defect recombination by electro-optical measurements, such confirming that low defect densities are essential for stimulated emission. A model for alloy fluctuations in In-rich InGaN-MQWs based on spectral and time resolved photoluminescence measurements yields potential fluctuations in the order of E0=57meV for our blue laser diodes. To get a closer insight into the physics of direct green InGaN-Laser we investigated the inhomogeneous broadening of experimentally measured gain curves via Hakki-Paoli-measurements in comparison to calculated gain spectra based on microscopic theory showing the importance of strong LO-phonon coupling in this material system. Investigations of current dependent gain measurements and calculations yield a factor of 2 higher inhomogeneous broadening for our green lasers than for our blue laser diodes on c-plane GaN. Based on the improvements of the material quality and design we demonstrate true green InGaN-Laser in cw-operation at 522nm with more than 80mW output power on c-plane GaN. The combination of low laser threshold ∼60-80mA, high slope efficiency ∼0.65W/A and low operating voltage 6.9-6.4V of our green monomode RWG-Laser results in a high wall plug efficiency of 5-6{\%} in a temperature range of 20-60°C.",
keywords = "GaN, RWG laser, Semiconductor laser",
author = "Stephan Lutgen and Dimitri Dini and Ines Pietzonka and Soenke Tautz and Andreas Breidenassel and Alfred Lell and Adrian Avramescu and Christoph Eichler and Teresa Lermer and Jens M{\"u}ller and Georg Bruederl and Alvaro Gomez and Uwe Strauss and Scheibenzuber, {Wolfgang G.} and Schwarz, {Ulrich T.} and Bernhard Pasenow and Koch, {Stephan W}",
year = "2011",
doi = "10.1117/12.874757",
language = "English (US)",
isbn = "9780819484901",
volume = "7953",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Recent results of blue and green InGaN laser diodes for laser projection

AU - Lutgen, Stephan

AU - Dini, Dimitri

AU - Pietzonka, Ines

AU - Tautz, Soenke

AU - Breidenassel, Andreas

AU - Lell, Alfred

AU - Avramescu, Adrian

AU - Eichler, Christoph

AU - Lermer, Teresa

AU - Müller, Jens

AU - Bruederl, Georg

AU - Gomez, Alvaro

AU - Strauss, Uwe

AU - Scheibenzuber, Wolfgang G.

AU - Schwarz, Ulrich T.

AU - Pasenow, Bernhard

AU - Koch, Stephan W

PY - 2011

Y1 - 2011

N2 - Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile applications is the optical output power and the wall plug efficiency of blue and green lasers. We report on improvements of the performance of true blue riedge waveguide InGaN lasers at 452nm with cw-output power up to 800mW in overstress and mono mode operation up to 500mW in a temperatures range of 20°C to 80°C. We succeeded in high and almost temperature independent wall plug efficiencies >20% at stable output power levels from 200 to 500mW in cw-operation. Due to several improvements of our blue laser diodes we now estimate life times is in the order of 40khrs for 80mW output power in cw-operation at 40°C. Additional overstress degradation tests at power levels up to 200mW show a strong dependency of lifetime with output power. Furthermore, we present pioneering results on true green InGaN laser diodes on c-plane GaN-substrates. The technological challenge is to achieve In-rich InGaN-quantum wells with sufficiently high material quality for lasing. We investigated the competing recombination processes below laser threshold like nonradiative defect recombination by electro-optical measurements, such confirming that low defect densities are essential for stimulated emission. A model for alloy fluctuations in In-rich InGaN-MQWs based on spectral and time resolved photoluminescence measurements yields potential fluctuations in the order of E0=57meV for our blue laser diodes. To get a closer insight into the physics of direct green InGaN-Laser we investigated the inhomogeneous broadening of experimentally measured gain curves via Hakki-Paoli-measurements in comparison to calculated gain spectra based on microscopic theory showing the importance of strong LO-phonon coupling in this material system. Investigations of current dependent gain measurements and calculations yield a factor of 2 higher inhomogeneous broadening for our green lasers than for our blue laser diodes on c-plane GaN. Based on the improvements of the material quality and design we demonstrate true green InGaN-Laser in cw-operation at 522nm with more than 80mW output power on c-plane GaN. The combination of low laser threshold ∼60-80mA, high slope efficiency ∼0.65W/A and low operating voltage 6.9-6.4V of our green monomode RWG-Laser results in a high wall plug efficiency of 5-6% in a temperature range of 20-60°C.

AB - Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile applications is the optical output power and the wall plug efficiency of blue and green lasers. We report on improvements of the performance of true blue riedge waveguide InGaN lasers at 452nm with cw-output power up to 800mW in overstress and mono mode operation up to 500mW in a temperatures range of 20°C to 80°C. We succeeded in high and almost temperature independent wall plug efficiencies >20% at stable output power levels from 200 to 500mW in cw-operation. Due to several improvements of our blue laser diodes we now estimate life times is in the order of 40khrs for 80mW output power in cw-operation at 40°C. Additional overstress degradation tests at power levels up to 200mW show a strong dependency of lifetime with output power. Furthermore, we present pioneering results on true green InGaN laser diodes on c-plane GaN-substrates. The technological challenge is to achieve In-rich InGaN-quantum wells with sufficiently high material quality for lasing. We investigated the competing recombination processes below laser threshold like nonradiative defect recombination by electro-optical measurements, such confirming that low defect densities are essential for stimulated emission. A model for alloy fluctuations in In-rich InGaN-MQWs based on spectral and time resolved photoluminescence measurements yields potential fluctuations in the order of E0=57meV for our blue laser diodes. To get a closer insight into the physics of direct green InGaN-Laser we investigated the inhomogeneous broadening of experimentally measured gain curves via Hakki-Paoli-measurements in comparison to calculated gain spectra based on microscopic theory showing the importance of strong LO-phonon coupling in this material system. Investigations of current dependent gain measurements and calculations yield a factor of 2 higher inhomogeneous broadening for our green lasers than for our blue laser diodes on c-plane GaN. Based on the improvements of the material quality and design we demonstrate true green InGaN-Laser in cw-operation at 522nm with more than 80mW output power on c-plane GaN. The combination of low laser threshold ∼60-80mA, high slope efficiency ∼0.65W/A and low operating voltage 6.9-6.4V of our green monomode RWG-Laser results in a high wall plug efficiency of 5-6% in a temperature range of 20-60°C.

KW - GaN

KW - RWG laser

KW - Semiconductor laser

UR - http://www.scopus.com/inward/record.url?scp=79953125633&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953125633&partnerID=8YFLogxK

U2 - 10.1117/12.874757

DO - 10.1117/12.874757

M3 - Conference contribution

AN - SCOPUS:79953125633

SN - 9780819484901

VL - 7953

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -