Abstract
A quantum-design approach to reduce the Auger losses in λ = 2 μm InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a ∼3 × reduction in the threshold, which results in 4.6 × lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 × and represents about a 19-fold reduction in the equivalent Auger coefficient.
Original language | English (US) |
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Article number | 073108 |
Journal | Journal of Applied Physics |
Volume | 110 |
Issue number | 7 |
DOIs | |
State | Published - Oct 1 2011 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)