Reduced auger recombination in mid-infrared semiconductor lasers

Robert G. Bedford; Gregory Triplett; David H. Tomich; Stephan W. Koch; Jerome Moloney; Jrg Hader

doi:10.1063/1.3646552

Reduced auger recombination in mid-infrared semiconductor lasers

Robert G. Bedford, Gregory Triplett, David H. Tomich, Stephan W. Koch, Jerome Moloney, Jrg Hader

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A quantum-design approach to reduce the Auger losses in λ = 2 μm InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a ∼3 × reduction in the threshold, which results in 4.6 × lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 × and represents about a 19-fold reduction in the equivalent Auger coefficient.

Original language	English (US)
Article number	073108
Journal	Journal of Applied Physics
Volume	110
Issue number	7
DOIs	https://doi.org/10.1063/1.3646552
State	Published - Oct 1 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3646552

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title = "Reduced auger recombination in mid-infrared semiconductor lasers",

abstract = "A quantum-design approach to reduce the Auger losses in λ = 2 μm InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a ∼3 × reduction in the threshold, which results in 4.6 × lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 × and represents about a 19-fold reduction in the equivalent Auger coefficient.",

author = "Bedford, {Robert G.} and Gregory Triplett and Tomich, {David H.} and {W. Koch}, Stephan and Jerome Moloney and Jrg Hader",

note = "Funding Information: The authors would like to thank Robert Cole for technical assistance. This work is supported by AFOSR lab task number 08RY08COR, AFOSR Young Investigator Program Grant No. FA9550-10-1-0482, and by a U.S. Joint Technology Office Grant No. AFOSR FA9550-07-1-0573.",

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T1 - Reduced auger recombination in mid-infrared semiconductor lasers

AU - Bedford, Robert G.

AU - Triplett, Gregory

AU - Tomich, David H.

AU - W. Koch, Stephan

AU - Moloney, Jerome

AU - Hader, Jrg

N1 - Funding Information: The authors would like to thank Robert Cole for technical assistance. This work is supported by AFOSR lab task number 08RY08COR, AFOSR Young Investigator Program Grant No. FA9550-10-1-0482, and by a U.S. Joint Technology Office Grant No. AFOSR FA9550-07-1-0573.

PY - 2011/10/1

Y1 - 2011/10/1

N2 - A quantum-design approach to reduce the Auger losses in λ = 2 μm InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a ∼3 × reduction in the threshold, which results in 4.6 × lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 × and represents about a 19-fold reduction in the equivalent Auger coefficient.

AB - A quantum-design approach to reduce the Auger losses in λ = 2 μm InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a ∼3 × reduction in the threshold, which results in 4.6 × lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 × and represents about a 19-fold reduction in the equivalent Auger coefficient.

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Reduced auger recombination in mid-infrared semiconductor lasers

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