Reduced auger recombination in mid-infrared semiconductor lasers

Robert G. Bedford; Gregory Triplett; David H. Tomich; Stephan W Koch; Jerome V Moloney; Jorg Hader

doi:10.1063/1.3646552

Reduced auger recombination in mid-infrared semiconductor lasers

Robert G. Bedford, Gregory Triplett, David H. Tomich, Stephan W Koch, Jerome V Moloney, Jorg Hader

Research output: Contribution to journal › Article

17 Scopus citations

Abstract

A quantum-design approach to reduce the Auger losses in λ = 2 μm InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a ∼3 × reduction in the threshold, which results in 4.6 × lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 × and represents about a 19-fold reduction in the equivalent Auger coefficient.

Original language	English (US)
Article number	073108
Journal	Journal of Applied Physics
Volume	110
Issue number	7
DOIs	https://doi.org/10.1063/1.3646552
Publication status	Published - Oct 1 2011
Externally published	Yes

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Bedford, R. G., Triplett, G., Tomich, D. H., Koch, S. W., Moloney, J. V., & Hader, J. (2011). Reduced auger recombination in mid-infrared semiconductor lasers. Journal of Applied Physics, 110(7), [073108]. https://doi.org/10.1063/1.3646552

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10.1063/1.3646552