Reduced auger recombination in mid-infrared semiconductor lasers

Robert G. Bedford, Gregory Triplett, David H. Tomich, Stephan W Koch, Jerome V Moloney, Jorg Hader

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A quantum-design approach to reduce the Auger losses in λ = 2 μm InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a ∼3 × reduction in the threshold, which results in 4.6 × lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 × and represents about a 19-fold reduction in the equivalent Auger coefficient.

Original languageEnglish (US)
Article number073108
JournalJournal of Applied Physics
Volume110
Issue number7
DOIs
StatePublished - Oct 1 2011
Externally publishedYes

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infrared lasers
semiconductor lasers
carrier lifetime
quantum wells
thresholds
room temperature
coefficients
lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Reduced auger recombination in mid-infrared semiconductor lasers. / Bedford, Robert G.; Triplett, Gregory; Tomich, David H.; Koch, Stephan W; Moloney, Jerome V; Hader, Jorg.

In: Journal of Applied Physics, Vol. 110, No. 7, 073108, 01.10.2011.

Research output: Contribution to journalArticle

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