Reduced polarization decay due to electron-hole in-scattering in a semiconductor active medium

S. Hughes, A. Knorr, S. W. Koch, W. W. Chow

Research output: Contribution to conferencePaper

Abstract

This paper shows that the in-scattering processes, which reduce the decay of the active medium polarization, should be included in a consistent treatment of semiconductor laser gain. The in-scattering processes affect the laser gain by decreasing the influence of the high k states, which contribute absorption to the spectrum. A theory, based on the semiconductor-Bloch equations with the effects of carrier-carrier scattering treated at the level of the quantum kinetic equations in the Markov limit, predicts gain spectra that do not exhibit absorption below the renormalized band gap, in agreement with experiment.

Original languageEnglish (US)
Pages157-158
Number of pages2
StatePublished - Jan 1 1996
EventProceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS - Anaheim, CA, USA
Duration: Jun 2 1996Jun 7 1996

Other

OtherProceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS
CityAnaheim, CA, USA
Period6/2/966/7/96

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Hughes, S., Knorr, A., Koch, S. W., & Chow, W. W. (1996). Reduced polarization decay due to electron-hole in-scattering in a semiconductor active medium. 157-158. Paper presented at Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS, Anaheim, CA, USA, .