Relation Between Interband Dipole and Momentum Matrix Elements in Semiconductors

Baijie Gu, Nai H. Kwong H., Rolf Binder

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The relation between dipole and momentum matrix elements in crystals, treated with periodic boundary conditions, is revisited. A correction term to standard expressions is found to be large for bulk GaAs, small for THz transitions.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationQELS_Fundamental Science, CLEO_QELS 2014
PublisherOptical Society of American (OSA)
ISBN (Print)9781557529992
StatePublished - Jan 1 2014
EventCLEO: QELS_Fundamental Science, CLEO_QELS 2014 - San Jose, CA, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherCLEO: QELS_Fundamental Science, CLEO_QELS 2014
CountryUnited States
CitySan Jose, CA
Period6/8/146/13/14

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Gu, B., Kwong H., N. H., & Binder, R. (2014). Relation Between Interband Dipole and Momentum Matrix Elements in Semiconductors. In CLEO: QELS_Fundamental Science, CLEO_QELS 2014 (Optics InfoBase Conference Papers). Optical Society of American (OSA).