Relation between interband dipole and momentum matrix elements in semiconductors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The relation between dipole and momentum matrix elements in crystals, treated with periodic boundary conditions, is revisited. A correction term to standard expressions is found to be large for bulk GaAs, small for THz transitions.

Original languageEnglish (US)
Title of host publicationFrontiers in Optics, FiO 2014
PublisherOptical Society of America (OSA)
ISBN (Electronic)1557522863
StatePublished - Oct 14 2014

Publication series

NameFrontiers in Optics, FiO 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Gu, B., Kwong, N. H., & Binder, R. (2014). Relation between interband dipole and momentum matrix elements in semiconductors. In Frontiers in Optics, FiO 2014 (Frontiers in Optics, FiO 2014). Optical Society of America (OSA).