Relation between interband dipole and momentum matrix elements in semiconductors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The relation between dipole and momentum matrix elements in crystals, treated with periodic boundary conditions, is revisited. A correction term to standard expressions is found to be large for bulk GaAs, small for THz transitions.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2014-January
StatePublished - 2014
Event2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other2014 Conference on Lasers and Electro-Optics, CLEO 2014
CountryUnited States
CitySan Jose
Period6/8/146/13/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Relation between interband dipole and momentum matrix elements in semiconductors'. Together they form a unique fingerprint.

  • Cite this

    Gu, B., Kwong, N-H., & Binder, R. (2014). Relation between interband dipole and momentum matrix elements in semiconductors. In Conference on Lasers and Electro-Optics Europe - Technical Digest (Vol. 2014-January). [6989089] Institute of Electrical and Electronics Engineers Inc..