Relation between interband dipole and momentum matrix elements in semiconductors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The relation between dipole and momentum matrix elements in crystals, treated with periodic boundary conditions, is revisited. A correction term to standard expressions is found to be large for bulk GaAs, small for THz transitions.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2014-January
StatePublished - 2014
Event2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other2014 Conference on Lasers and Electro-Optics, CLEO 2014
CountryUnited States
CitySan Jose
Period6/8/146/13/14

Fingerprint

Momentum
Boundary conditions
Semiconductor materials
boundary conditions
dipoles
momentum
Crystals
matrices
crystals
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

Gu, B., Kwong, N-H., & Binder, R. (2014). Relation between interband dipole and momentum matrix elements in semiconductors. In Conference on Lasers and Electro-Optics Europe - Technical Digest (Vol. 2014-January). [6989089] Institute of Electrical and Electronics Engineers Inc..

Relation between interband dipole and momentum matrix elements in semiconductors. / Gu, Baijie; Kwong, Nai-Hang; Binder, Rudolf.

Conference on Lasers and Electro-Optics Europe - Technical Digest. Vol. 2014-January Institute of Electrical and Electronics Engineers Inc., 2014. 6989089.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gu, B, Kwong, N-H & Binder, R 2014, Relation between interband dipole and momentum matrix elements in semiconductors. in Conference on Lasers and Electro-Optics Europe - Technical Digest. vol. 2014-January, 6989089, Institute of Electrical and Electronics Engineers Inc., 2014 Conference on Lasers and Electro-Optics, CLEO 2014, San Jose, United States, 6/8/14.
Gu B, Kwong N-H, Binder R. Relation between interband dipole and momentum matrix elements in semiconductors. In Conference on Lasers and Electro-Optics Europe - Technical Digest. Vol. 2014-January. Institute of Electrical and Electronics Engineers Inc. 2014. 6989089
Gu, Baijie ; Kwong, Nai-Hang ; Binder, Rudolf. / Relation between interband dipole and momentum matrix elements in semiconductors. Conference on Lasers and Electro-Optics Europe - Technical Digest. Vol. 2014-January Institute of Electrical and Electronics Engineers Inc., 2014.
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