Relation between interband dipole and momentum matrix elements in semiconductors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The relation between dipole and momentum matrix elements in crystals, treated with periodic boundary conditions, is revisited. A correction term to standard expressions is found to be large for bulk GaAs, small for THz transitions.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationApplications and Technology, CLEO_AT 2014
PublisherOptical Society of America (OSA)
ISBN (Print)9781557529992, 9781557529992
DOIs
StatePublished - 2014
EventCLEO: Applications and Technology, CLEO_AT 2014 - San Jose, CA, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherCLEO: Applications and Technology, CLEO_AT 2014
CountryUnited States
CitySan Jose, CA
Period6/8/146/13/14

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Gu, B., Kwong, N. H., & Binder, R. (2014). Relation between interband dipole and momentum matrix elements in semiconductors. In CLEO: Applications and Technology, CLEO_AT 2014 (Optics InfoBase Conference Papers). Optical Society of America (OSA). https://doi.org/10.1364/cleo_at.2014.jtu4a.25