The repair of porous methyl-substituted silicon dioxide films after plasma processing was investigated using hexamethyldisilazane (HMDS) dissolved in liquid and supercritical carbon dioxide. The films were cured, blanket methylsilsesquioxane (MSQ) layers (JSR LKD 5109). An ashed film treated with a HMDS/supercritical carbon dioxide (scCO 2) mixture was stable for thirty days without readsorbing moisture from the ambient as shown by both Fourier transform infrared (FTIK) spectroscopy and contact angle measurements, whereas a film annealed to 360°C in nitrogen for 2 min readsorbed moisture quickly over 10 days. The film thickness increased by 2-5 nm and the surfaces were Hydrophobic after processing with HMDS. The dielectric constant of metal-insulator-semiconductor capacitors was 2.89 ± 0.08 in 1 vol% HMDS/liquid CO 2, 2.55 ± 0.07 in 1 vol% HMDS/scCO 2, and 2.57 ± 0.06 in pure liquid HMDS, demonstrating partial or complete repair after plasma ashing. Processing with supercritical CO 2 yielded the best performance based on resistance to moisture readsorption, contact angle, dielectric constant, resource consumption, and processing time.
|Original language||English (US)|
|Number of pages||8|
|State||Published - Dec 1 2005|
|Event||9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States|
Duration: Oct 16 2005 → Oct 21 2005
ASJC Scopus subject areas