Repair of porous methylsilsesquioxane films using supercritical carbon dioxide

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Porous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) were treated with alkyldimethylmonochlorosilanes having chain lengths of one, four, and eight carbon atoms dissolved in supercritical carbon dioxide at 150-300 atm and 50-60°C to repair oxygen ashing damage. Fourier transform infrared (FTIR) spectroscopy showed that trimethylchlorosilane (TMCS), butyldimethylchlorosilane (BDMCS), and octyldimethylchlorosilane (ODMCS) reacted with silanol groups on the surfaces of the pores producing covalent Si-O-Si bonds. Self-condensation between alkylsilanols produced a residue on the surface, which was partially removed using a pure scCO2 rinse. The hydrophobicity of the blanket p-MSQ surface was recovered after silylation treatment as shown by contact angles >85°. The initial dielectric constant of 2.4 ± 0.1 increased to 3.5 ± 0.1 after oxygen plasma ashing and was reduced to 2.6 ± 0.1 by TMCS, 2.8 ± 0.1 by BDMCS, and 3.2 by ODMCS.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsR.J. Carter, C.S. Hau-Riege, G.M. Kloster, T.-M. Lu, S.E. Schulz
Pages13-18
Number of pages6
Volume812
Publication statusPublished - 2004
EventMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004 - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004

Other

OtherMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004
CountryUnited States
CitySan Francisco, CA
Period4/13/044/15/04

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Xie, B., & Muscat, A. J. (2004). Repair of porous methylsilsesquioxane films using supercritical carbon dioxide. In R. J. Carter, C. S. Hau-Riege, G. M. Kloster, T-M. Lu, & S. E. Schulz (Eds.), Materials Research Society Symposium Proceedings (Vol. 812, pp. 13-18)