Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO2

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Fourier transform infrared (FTIR) spectroscopy, contact angle, and electrical measurements were used to study porous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) processed with alkylmonochlorosilanes having chain lengths of one to eighteen carbon atoms dissolved in supercritical carbon dioxide at 155-185 atm and 55-60°C to repair oxygen ashing damage. The FTIR results showed that all chemistries reacted with silanol groups on the surface of the pores producing covalent Si-O-Si bonds. Self-condensation between the alkylsilanols with chain lengths above four carbon atoms produced a physisorbed residue, which was partially removed after rinsing with pure SCCO2. The hydrophobicity of the blanket p-MSQ surface was recovered, while the initial dielectric constant of 2.4 for the blanket p-MSQ surface was restored after treatment. With an increase in the length of the alkyl chain, the contact angle increased from 84° to 108° and the dielectric constant measured on metal-insulator-semiconductor capacitors was approximately constant in the range 2.4 ± 0.05. The monochlorosilanes restore the dielectric constant and surface properties of mesoporous p-MSQ and are candidate pore sealing additives.

Original languageEnglish (US)
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Pages323-326
Number of pages4
Volume103-104
ISBN (Print)390845106X, 9783908451068
StatePublished - 2005
Event7th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2004 - Brussels, Belgium
Duration: Sep 20 2004Sep 22 2004

Publication series

NameSolid State Phenomena
Volume103-104
ISSN (Print)10120394

Other

Other7th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2004
CountryBelgium
CityBrussels
Period9/20/049/22/04

Fingerprint

Repair
Permittivity
blankets
permittivity
Chain length
Contact angle
Carbon
porosity
Atoms
carbon
sealing
MIS (semiconductors)
Hydrophobicity
hydrophobicity
Carbon Dioxide
surface properties
electrical measurement
Surface properties
Fourier transform infrared spectroscopy
atoms

Keywords

  • Contact angle
  • Electrical measurement
  • Film repair
  • FTIR
  • Monochlorosilane
  • Pore capping
  • Porous MSQ

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Xie, B., & Muscat, A. J. (2005). Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO2. In Solid State Phenomena (Vol. 103-104, pp. 323-326). (Solid State Phenomena; Vol. 103-104). Trans Tech Publications Ltd.

Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO2. / Xie, Bo; Muscat, Anthony J.

Solid State Phenomena. Vol. 103-104 Trans Tech Publications Ltd, 2005. p. 323-326 (Solid State Phenomena; Vol. 103-104).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xie, B & Muscat, AJ 2005, Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO2. in Solid State Phenomena. vol. 103-104, Solid State Phenomena, vol. 103-104, Trans Tech Publications Ltd, pp. 323-326, 7th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2004, Brussels, Belgium, 9/20/04.
Xie B, Muscat AJ. Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO2. In Solid State Phenomena. Vol. 103-104. Trans Tech Publications Ltd. 2005. p. 323-326. (Solid State Phenomena).
Xie, Bo ; Muscat, Anthony J. / Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO2. Solid State Phenomena. Vol. 103-104 Trans Tech Publications Ltd, 2005. pp. 323-326 (Solid State Phenomena).
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AB - Fourier transform infrared (FTIR) spectroscopy, contact angle, and electrical measurements were used to study porous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) processed with alkylmonochlorosilanes having chain lengths of one to eighteen carbon atoms dissolved in supercritical carbon dioxide at 155-185 atm and 55-60°C to repair oxygen ashing damage. The FTIR results showed that all chemistries reacted with silanol groups on the surface of the pores producing covalent Si-O-Si bonds. Self-condensation between the alkylsilanols with chain lengths above four carbon atoms produced a physisorbed residue, which was partially removed after rinsing with pure SCCO2. The hydrophobicity of the blanket p-MSQ surface was recovered, while the initial dielectric constant of 2.4 for the blanket p-MSQ surface was restored after treatment. With an increase in the length of the alkyl chain, the contact angle increased from 84° to 108° and the dielectric constant measured on metal-insulator-semiconductor capacitors was approximately constant in the range 2.4 ± 0.05. The monochlorosilanes restore the dielectric constant and surface properties of mesoporous p-MSQ and are candidate pore sealing additives.

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