Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO2

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

Fourier transform infrared (FTIR) spectroscopy, contact angle, and electrical measurements were used to study porous methylsilsesquioxane (p-MSQ) films (JSR LKD 5109) processed with alkylmonochlorosilanes having chain lengths of one to eighteen carbon atoms dissolved in supercritical carbon dioxide at 155-185 atm and 55-60°C to repair oxygen ashing damage. The FTIR results showed that all chemistries reacted with silanol groups on the surface of the pores producing covalent Si-O-Si bonds. Self-condensation between the alkylsilanols with chain lengths above four carbon atoms produced a physisorbed residue, which was partially removed after rinsing with pure SCCO2. The hydrophobicity of the blanket p-MSQ surface was recovered, while the initial dielectric constant of 2.4 for the blanket p-MSQ surface was restored after treatment. With an increase in the length of the alkyl chain, the contact angle increased from 84° to 108° and the dielectric constant measured on metal-insulator-semiconductor capacitors was approximately constant in the range 2.4 ± 0.05. The monochlorosilanes restore the dielectric constant and surface properties of mesoporous p-MSQ and are candidate pore sealing additives.

Original languageEnglish (US)
Title of host publicationUltra Clean Processing of Silicon Surfaces VII, UCPSS 2004 - Proceedings of the 7th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS)
PublisherTrans Tech Publications Ltd
Pages323-326
Number of pages4
ISBN (Print)390845106X, 9783908451068
StatePublished - Jan 1 2005
Event7th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2004 - Brussels, Belgium
Duration: Sep 20 2004Sep 22 2004

Publication series

NameSolid State Phenomena
Volume103-104
ISSN (Print)1012-0394

Other

Other7th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 2004
CountryBelgium
CityBrussels
Period9/20/049/22/04

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Keywords

  • Contact angle
  • Electrical measurement
  • FTIR
  • Film repair
  • Monochlorosilane
  • Pore capping
  • Porous MSQ

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Xie, B., & Muscat, A. J. (2005). Repair of porous MSQ (p-MSQ) films using monochlorosilanes dissolved in supercritical CO2. In Ultra Clean Processing of Silicon Surfaces VII, UCPSS 2004 - Proceedings of the 7th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS) (pp. 323-326). (Solid State Phenomena; Vol. 103-104). Trans Tech Publications Ltd.