Reversible and reproducible giant universal electroresistance effect

Syed Rizwan, Sen Zhang, Tian Yu, Yong Gang Zhao, Shufeng Zhang, Xiu Feng Han

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

After the prediction of the giant electroresistance effect, much work has been carried out to find this effect in practical devices. We demonstrate a novel way to obtain a large electroresistance (ER) effect in the multilayer system at room temperature. The current-in-plane (CIP) electric transport measurement is performed on the multilayer structure consisting of (011)-Pb(Mg1/3Nb2/3)O3-PbTiO 3(PMN-PT)/Ta/Al-O/metal. It is found that the resistance of the top metallic layer shows a hysteretic behavior as a function electric field, which corresponds well with the substrate polarization versus electric field (P - E) loop. This reversible hysteretic R - E behavior is independent of the applied magnetic field as well as the magnetic structure of the top metallic layer and keeps its memory state. This novel memory effect is attributed to the polarization reversal induced electrostatic potential, which is felt throughout the multilayer stack and is enhanced by the dielectric Al-O layer producing unique hysteretic, reversible, and reproducible resistance switching behavior. This novel universal electroresistance effect will open a new gateway to the development of future multiferroic memory devices operating at room temperature.

Original languageEnglish (US)
Article number107308
JournalChinese Physics Letters
Volume28
Issue number10
DOIs
StatePublished - Oct 2011

Fingerprint

electric fields
room temperature
polarization
laminates
electrostatics
predictions
magnetic fields
metals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Reversible and reproducible giant universal electroresistance effect. / Rizwan, Syed; Zhang, Sen; Yu, Tian; Zhao, Yong Gang; Zhang, Shufeng; Han, Xiu Feng.

In: Chinese Physics Letters, Vol. 28, No. 10, 107308, 10.2011.

Research output: Contribution to journalArticle

Rizwan, Syed ; Zhang, Sen ; Yu, Tian ; Zhao, Yong Gang ; Zhang, Shufeng ; Han, Xiu Feng. / Reversible and reproducible giant universal electroresistance effect. In: Chinese Physics Letters. 2011 ; Vol. 28, No. 10.
@article{395ccfe668e64926bc55608fc1d90d0d,
title = "Reversible and reproducible giant universal electroresistance effect",
abstract = "After the prediction of the giant electroresistance effect, much work has been carried out to find this effect in practical devices. We demonstrate a novel way to obtain a large electroresistance (ER) effect in the multilayer system at room temperature. The current-in-plane (CIP) electric transport measurement is performed on the multilayer structure consisting of (011)-Pb(Mg1/3Nb2/3)O3-PbTiO 3(PMN-PT)/Ta/Al-O/metal. It is found that the resistance of the top metallic layer shows a hysteretic behavior as a function electric field, which corresponds well with the substrate polarization versus electric field (P - E) loop. This reversible hysteretic R - E behavior is independent of the applied magnetic field as well as the magnetic structure of the top metallic layer and keeps its memory state. This novel memory effect is attributed to the polarization reversal induced electrostatic potential, which is felt throughout the multilayer stack and is enhanced by the dielectric Al-O layer producing unique hysteretic, reversible, and reproducible resistance switching behavior. This novel universal electroresistance effect will open a new gateway to the development of future multiferroic memory devices operating at room temperature.",
author = "Syed Rizwan and Sen Zhang and Tian Yu and Zhao, {Yong Gang} and Shufeng Zhang and Han, {Xiu Feng}",
year = "2011",
month = "10",
doi = "10.1088/0256-307X/28/10/107308",
language = "English (US)",
volume = "28",
journal = "Chinese Physics Letters",
issn = "0256-307X",
publisher = "IOP Publishing Ltd.",
number = "10",

}

TY - JOUR

T1 - Reversible and reproducible giant universal electroresistance effect

AU - Rizwan, Syed

AU - Zhang, Sen

AU - Yu, Tian

AU - Zhao, Yong Gang

AU - Zhang, Shufeng

AU - Han, Xiu Feng

PY - 2011/10

Y1 - 2011/10

N2 - After the prediction of the giant electroresistance effect, much work has been carried out to find this effect in practical devices. We demonstrate a novel way to obtain a large electroresistance (ER) effect in the multilayer system at room temperature. The current-in-plane (CIP) electric transport measurement is performed on the multilayer structure consisting of (011)-Pb(Mg1/3Nb2/3)O3-PbTiO 3(PMN-PT)/Ta/Al-O/metal. It is found that the resistance of the top metallic layer shows a hysteretic behavior as a function electric field, which corresponds well with the substrate polarization versus electric field (P - E) loop. This reversible hysteretic R - E behavior is independent of the applied magnetic field as well as the magnetic structure of the top metallic layer and keeps its memory state. This novel memory effect is attributed to the polarization reversal induced electrostatic potential, which is felt throughout the multilayer stack and is enhanced by the dielectric Al-O layer producing unique hysteretic, reversible, and reproducible resistance switching behavior. This novel universal electroresistance effect will open a new gateway to the development of future multiferroic memory devices operating at room temperature.

AB - After the prediction of the giant electroresistance effect, much work has been carried out to find this effect in practical devices. We demonstrate a novel way to obtain a large electroresistance (ER) effect in the multilayer system at room temperature. The current-in-plane (CIP) electric transport measurement is performed on the multilayer structure consisting of (011)-Pb(Mg1/3Nb2/3)O3-PbTiO 3(PMN-PT)/Ta/Al-O/metal. It is found that the resistance of the top metallic layer shows a hysteretic behavior as a function electric field, which corresponds well with the substrate polarization versus electric field (P - E) loop. This reversible hysteretic R - E behavior is independent of the applied magnetic field as well as the magnetic structure of the top metallic layer and keeps its memory state. This novel memory effect is attributed to the polarization reversal induced electrostatic potential, which is felt throughout the multilayer stack and is enhanced by the dielectric Al-O layer producing unique hysteretic, reversible, and reproducible resistance switching behavior. This novel universal electroresistance effect will open a new gateway to the development of future multiferroic memory devices operating at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=80053944115&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053944115&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/28/10/107308

DO - 10.1088/0256-307X/28/10/107308

M3 - Article

AN - SCOPUS:80053944115

VL - 28

JO - Chinese Physics Letters

JF - Chinese Physics Letters

SN - 0256-307X

IS - 10

M1 - 107308

ER -